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2SB1253 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # 2SB1253
Description  isc Silicon PNP Darlington Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SB1253 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  2SB1253_16 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SB1253_16 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
2
isc Silicon PNP Darlington Power Transistor
2SB1253
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0
-110
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -5A; IB= -5mA
-2.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= -5A; IB= -5mA
-3.0
V
ICBO
Collector Cutoff Current
VCB= -130V; IE= 0
-100
μ
A
ICEO
Collector Cutoff Current
VCE= -110V; IB= 0
-100
μ
A
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-100
μ
A
hFE-1
DC Current Gain
IC= -1A; VCE= -5V
2000
hFE-2
DC Current Gain
IC= -5A; VCE= -5V
5000
30000
fT
Current-Gain—Bandwidth Product
IC= -0.5A; VCE= -10V
20
MHz
Switching Times
ton
Turn-on Time
IC= -5A; IB1= -IB2= -5mA,
VCC= -50V,
0.9
μ
s
tstg
Storage Time
2.5
μ
s
tf
Fall Time
1.7
μ
s
hFE-2 Classifications
Q
P
5000-15000
8000-30000



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