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IRKU105/08AS90 Datasheet(PDF) 3 Page - International Rectifier |
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IRKU105/08AS90 Datasheet(HTML) 3 Page - International Rectifier |
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3 / 8 page  IRKU/V105 Series 3 Bulletin I27136 rev. E 10/02 www.irf.com T J Junction operating temperature range Tstg Storage temperature range - 40 to 125 R thJC Max. internal thermal resistance, 0.135 Per module, DC operation junction to case R thCS Typical thermal resistance case to heatsink T Mounting torque ± 10% to heatsink 5 busbar 3 wt Approximate weight 110 (4) g (oz) Case style TO-240AA JEDEC Thermal and Mechanical Specifications Parameters IRKU/V105 Units Conditions - 40 to 130 0.1 (5) Available with dv/dt = 1000V/ µs, to complete code add S90 i.e. IRKU105/16AS90. A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound °C K/W Nm Mounting surface flat, smooth and greased I RRM Max. peak reverse and I DRM off-state leakage current 20 mA T J = 130oC, gate open circuit at VRRM, VDRM V INS RMS isolation voltage 2500 (1 min) 50 Hz, circuit to base, all terminals 3500 (1 sec) shorted dv/dt Max. critical rate of rise T J = 130oC, linear to 0.67 V DRM , of off-state voltage (5) gate open circuit Triggering P GM Max. peak gate power 12 P G(AV) Max. average gate power 3 I GM Max. peak gate current 3 A -V GM Max. peak negative gate voltage 10 V GT Max. gate voltage 4.0 V TJ = - 40°C required to trigger 2.5 TJ = 25°C 1.7 TJ = 125°C I GT Max. gate current 270 TJ = - 40°C required to trigger 150 mA TJ = 25°C 80 TJ = 125°C V GD Max. gate voltage that will not trigger I GD Max. gate current that will not trigger 0.25 V 6mA Anode supply = 6V resistive load Anode supply = 6V resistive load W T J = 125oC, rated V DRM applied T J = 125oC, rated V DRM applied Parameters IRK.U/V105 Units Conditions Parameters IRKU/V 105 Units Conditions Blocking V 500 V/ µs Sine half wave conduction Rect. wave conduction Devices Units 180o 120o 90o 60o 30o 180o 120o 90o 60o 30o IRKU/V105 0.04 0.05 0.06 0.08 0.12 0.03 0.05 0.06 0.08 0.12 °C/W ∆R Conduction (per Junction) (The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC) |
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