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EC747N65AFR Datasheet(PDF) 3 Page - E-CMOS Corporation

Part # EC747N65AFR
Description  650V,7A N-Channel Power MOSFET
PDF  6 Pages
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Manufacturer  E-CMOS [E-CMOS Corporation]
Direct Link  http://www.ecmos.com.tw/
Logo E-CMOS - E-CMOS Corporation

EC747N65AFR Datasheet(HTML) 3 Page - E-CMOS Corporation

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EC747N65
650V,7A N-Channel Power MOSFET
C
o
n
v
e
r
t
e
r
E-CMOS Corp. (www.ecmos.com.tw)
Page 3 of 6
4J06N-Rev.F001
IS
Drain-Source Diode Forward
Continuous Current
VGS = 0V
-
-
7.0
A
ISM
Miximum Pulsed Current
VGS = 0V
-
-
28
A
VSD
Drain-Source Diode
Forward Voltage
VGS = 0V, IS =3.5A
-
-
1.5
V
■ Drain-Source Diode Characteristics
Notes :
a. TJ = +25 C to +150 C.
b. Repetitive rating; pulse width limited by maximum junction temperature.
c. L=10mH, VDD =50V, IAS =9A, RG =25Ω Starting TJ =25 ℃.
d. Pulse width≦ 300
μs; duty cycle≦ 2%.
ORDERING INFORMATION
Part Number
Package
Marking
Marking Information
EC747N65AFR
TO-220F-3L
747N65
LLLLL
YYWW
1.
LLLLL：Lot No.
2.
YY：Year code
3.
WW：Week code
EC747N65AR
TO-220-3L
EC747N65A9R
TO-263-3L



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