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EC2622EA7GR Datasheet(PDF) 4 Page - E-CMOS Corporation |
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EC2622EA7GR Datasheet(HTML) 4 Page - E-CMOS Corporation |
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4 / 6 page ![]() EC2622 Micropower CMOS Output Hall Effect Switch E-CMOS Corp. (www.ecmos.com.tw) Page 4 of 6 4H18N-Rev. F001 Parameters Test Conditions Min Typ Max Units Supply Voltage,(VDD) Operating 1.65 3.5 Volts Supply Current,(IDD) Awake State 1.4 3 mA Supply Current,(IDD) Sleep State 3.6 7 μA Supply Current,(IDD) Average 5 10 μA Output Leakage Output off 1 uA Output High Voltage,(VOH) IOUT=0.5mA(Source) VDD-0.2 V Output Low Voltage,(VOL) IOUT=0.5mA(Sink) 0.2 V Awake mode time,(Taw) Operating 40 80 uS Sleep mode time,(TSL) Operating 40 80 mS Duty Cycle,(D,C) 0.1 % Electro-Static Discharge HBM 4 KV (BOPS) Operate Point, (BOPN) S pole to branded side, B > BOP, OUT1 On 30 50 Gauss (BOPS) Operate Point, (BOPN) N pole to branded side, B< BOP, OUT2 On -50 -30 Gauss (BRPS) Release Point (BRPN) S pole to branded side, B < BRP, Vout Off 10 20 Gauss (BRPS) Release Point (BRPN) N pole to branded side, B > BRP, Vout Off -20 -10 Gauss Hysteresis,(BHYS) |BOPx - BRPx| 10 Gauss Electrical Specifications DC Operating Parameters:Ta=25℃, VDD=1.8V |
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