Analog Power

AMR402N

N-Channel 200-V (D-S) MOSFET

5.4

4.8

Symbol

Limit

Units

200

±20

5.4

4.3

20

5.7

A

5

3.2

-55 to 150

°C

Symbol

Maximum

Units

25

65

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature

Power Dissipation

a

t <= 10 sec

Steady State

A

W

Continuous Drain Current

a

Gate-Source Voltage

PRODUCT SUMMARY

200

Pulsed Drain Current

b

Continuous Source Current (Diode Conduction)

a

THERMAL RESISTANCE RATINGS

°C/W

Parameter

Operating Junction and Storage Temperature Range

V

Parameter

Drain-Source Voltage

Maximum Junction-to-Ambient

a

Key Features:

• Low thermal impedance

• Fast switching speed

Typical Applications:

• PoE PSE and PD Circuits

• LED Inverter Circuits

• 48V-Input DC/DC Conversion Circuits

DFN5X6-8L

© Preliminary

1

Publication Order Number:

DS_AMR402N_1A