PIC12CE673-10SLASHP datasheet(81/116 Pages) MICROCHIP

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Preliminary

DS40181B-page 81

PIC12CE67X

12.0

ELECTRICAL CHARACTERISTICS FOR PIC12CE67X

Absolute Maximum Ratings †

Ambient temperature under bias............................................................................................................. .–40

° to +125°C

Storage temperature ............................................................................................................................. –65

°C to +150°C

Voltage on any pin with respect to VSS (except VDD and MCLR)................................................... –0.3V to (VDD + 0.3V)

Voltage on VDD with respect to VSS ................................................................................................................ 0 to +7.0V

Voltage on MCLR with respect to VSS (Note 2)..................................................................................................0 to +14V

Total power dissipation (Note 1) ...........................................................................................................................700 mW

Maximum current out of VSS pin ...........................................................................................................................150 mA

Maximum current into VDD pin ..............................................................................................................................125 mA

Input clamp current, IIK (VI < 0 or VI > VDD)

.....................................................................................................................± 20 mA

Output clamp current, IOK (VO < 0 or VO > VDD)

.............................................................................................................± 20 mA

Maximum output current sunk by any I/O pin..........................................................................................................25 mA

Maximum output current sourced by any I/O pin ....................................................................................................25 mA

Maximum current sunk by GPIO pins combined ...................................................................................................100 mA

Maximum current sourced by GPIO pins combined..............................................................................................100 mA

Note 1: Power dissipation is calculated as follows: Pdis = VDD x {IDD -

∑ IOH} + ∑ {(VDD - VOH) x IOH} + ∑(VOl x IOL).

† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at those or any other conditions above those

indicated in the operation listings of this speciﬁcation is not implied. Exposure to maximum rating conditions for

extended periods may affect device reliability.

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