HT81R36

Unit:

mm

Pad No.

X

Y

Pad No.

X

Y

1

-800.500

1382.800

9

712.200

-1372.000

2

-1071.700

-1175.050

10

1053.500

-1372.000

3

-1066.600

-1372.000

11

1053.500

-1067.650

4

-468.200

-1361.000

12

1043.900

-874.750

5

-193.300

-1371.600

13

941.200

1389.700

6

43.900

-1371.600

14

513.175

1384.300

7

290.900

-1371.700

15

-210.400

1382.800

8

485.000

-1372.000

16

-555.200

1382.800

Pin Description

Pin No.

Pin Name

I/O

Internal Connection

Description

1

I/O2

I/O

NMOS Pull-high

Trigger key 6, active low/NMOS output

2

I/O1

I

NMOS Pull-high

Trigger key 5, active low/NMOS output

3

KEY4

I

Pull-high

Trigger key 4, active low

4

KEY3

I

Pull-high

Trigger key 3, active low

5, 12

VDD

¾¾

Positive power supply

6

OSCI

I

Oscillator Input Pin

Oscillator input pin

7

KEY1

I

Pull-high

Trigger key 1, active low

8

KEY2

I

Pull-high

Trigger key 2, active low

9

OUT3

I/O

Pull-high Input/NMOS

Pull-high/transistor output/NMOS output

10, 14

VSS

¾¾

Negative power supply, ground

11

OUT2

O

CMOS

PWM output

-/CMOS output

13

OUT1

O

CMOS

PWM output +/CMOS output

15, 16

NC

¾¾

No connection - HT81R36 OTP device except

OE, VPP

¾¾

HT81R36 OTP device only

Absolute Maximum Ratings

Storage Temperature ..........................

-50°Cto125°C

Operating Temperature ..........................

-20°Cto70°C

Note: These are stress ratings only. Stresses exceeding the range specified under

²Absolute Maximum Ratings² may

cause substantial damage to the device. Functional operation of this device at other conditions beyond those

listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliabil-

ity.

HT81XXX

Rev. 1.40

8

March 1, 2005