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FESD05LVC Datasheet(PDF) 2 Page - FutureWafer Tech Co.,Ltd |
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FESD05LVC Datasheet(HTML) 2 Page - FutureWafer Tech Co.,Ltd |
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2 / 6 page ![]() Rating and characteristic curve Parameter Symbol Condition Min. Typ. Max. Units Reverse Stand-off Voltage VRWM Pin 5 to 2 5.5 V Reverse Breakdown Voltage VBR IZ=1mA Pin5 to 2 6.1 9.6 V Reverse Leakage Current IR Pins 1,3,4,6 to GND. 100 nA Forward Voltage VF IF=1mA 0.7 1.0 V Clamping Voltage VC IPP=1A tp=8/20us Pin 5 to 2 15 V Junction Capacitance C I/O Pin capacitance to GND.Vdc=0V,f=1MHZ 1 pf Junction Capacitance C I/O-I/O Vdc=0V,f=1MHZ 0.6 pf 0.01 0.1 1 1 10 100 td-Pulse Width(us) FIGURE 1 Non-repetitive Peak pulse power V.S pulse time FESD05LVCA Ultra Low Capacitance ESD array Electrical Characteristics 150W,8/20µS Futurewafer Technology Co., Ltd E1603F6A-STD-FW-03 |
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