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IXDN55N120 Datasheet(PDF) 2 Page - IXYS Corporation

Part # IXDN55N120
Description  High Voltage IGBT with optional Diode
PDF  4 Pages
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXDN55N120 Datasheet(HTML) 2 Page - IXYS Corporation

  IXDN55N120 Datasheet HTML 1Page - IXYS Corporation IXDN55N120 Datasheet HTML 2Page - IXYS Corporation IXDN55N120 Datasheet HTML 3Page - IXYS Corporation IXDN55N120 Datasheet HTML 4Page - IXYS Corporation  
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IXDN 55N120
IXDN 55N120 D1
Symbol
Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
min.
typ.
max.
C
ies
3300
pF
C
oes
V
CE = 25 V, VGE = 0 V, f = 1 MHz
500
pF
C
res
220
pF
Q
g
I
C = 50 A, VGE = 15 V, VCE = 0.5 VCES
240
nC
t
d(on)
100
ns
t
r
70
ns
t
d(off)
500
ns
t
f
70
ns
E
on
8.4
mJ
E
off
6.2
mJ
R
thJC
0.28 K/W
R
thCK
Package with heatsink compound
0.1
K/W
Inductive load, T
J = 125°C
I
C = 55 A, VGE = ±15 V,
V
CE = 600 V, RG = 22 W
Reverse Diode (FRED) [D1 version only]
Characteristic Values
(T
J = 25°C, unless otherwise specified)
Symbol
Conditions
min.
typ.
max.
V
F
I
F = 55 A, VGE = 0 V
2.4
2.6
V
I
F = 55 A, VGE = 0 V, TJ = 125°C
1.9
V
I
F
T
C = 25°C
110
A
T
C = 90°C
60
A
I
RM
I
F = 55 A, -diF/dt = 400 A/µs, VR = 600 V
40
A
t
rr
V
GE = 0 V, TJ = 125°C
200
ns
t
rr
I
F = 1 A, -diF/dt = 100 A/µs, VR = 30 V, VGE = 0 V
40
ns
R
thJC
0.6 K/W
M4 screws (4x) supplied
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
31.50
31.88
1.240
1.255
B
7.80
8.20
0.307
0.323
C
4.09
4.29
0.161
0.169
D
4.09
4.29
0.161
0.169
E
4.09
4.29
0.161
0.169
F
14.91
15.11
0.587
0.595
G
30.12
30.30
1.186
1.193
H
37.80
38.20
1.489
1.505
J
11.68
12.22
0.460
0.481
K
8.92
9.60
0.351
0.378
L
0.76
0.84
0.030
0.033
M
12.60
12.85
0.496
0.506
N
25.15
25.42
0.990
1.001
O
1.98
2.13
0.078
0.084
P
4.95
5.97
0.195
0.235
Q
26.54
26.90
1.045
1.059
R
3.94
4.42
0.155
0.174
S
4.72
4.85
0.186
0.191
T
24.59
25.07
0.968
0.987
U
-0.05
0.1
-0.002
0.004
V
3.30
4.57
0.130
0.180
W
0.780
0.830
19.81
21.08
miniBLOC, SOT-227 B



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