MMBT5551 datasheet(2/6 Pages) ONSEMI

2 / 6 page

MMBT5550LT1, MMBT5551LT1

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector − Emitter Breakdown Voltage (Note 3)

(IC = 1.0 mAdc, IB = 0)

MMBT5550

MMBT5551

V(BR)CEO

140

160

−

Vdc

Collector − Base Breakdown Voltage

(IC = 100 mAdc, IE = 0)

MMBT5550

MMBT5551

V(BR)CBO

160

180

−

Vdc

Emitter − Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V(BR)EBO

6.0

−

Vdc

Collector Cutoff Current

(VCB = 100 Vdc, IE = 0)

MMBT5550

(VCB = 120 Vdc, IE = 0)

MMBT5551

(VCB = 100 Vdc, IE = 0, TA = 100°C)

MMBT5550

(VCB = 120 Vdc, IE = 0, TA = 100°C)

MMBT5551

ICBO

−

100

nAdc

mAdc

Emitter Cutoff Current

(VEB = 4.0 Vdc, IC = 0)

IEBO

−

nAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 1.0 mAdc, VCE = 5.0 Vdc)

MMBT5550

MMBT5551

(IC = 10 mAdc, VCE = 5.0 Vdc)

MMBT5550

MMBT5551

(IC = 50 mAdc, VCE = 5.0 Vdc)

MMBT5550

MMBT5551

hFE

−

250

−

Collector − Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

Both Types

(IC = 50 mAdc, IB = 5.0 mAdc)

MMBT5550

MMBT5551

VCE(sat)

−

0.15

0.25

0.20

Vdc

Base − Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

Both Types

(IC = 50 mAdc, IB = 5.0 mAdc)

MMBT5550

MMBT5551

VBE(sat)

−

1.0

1.2

1.0

Vdc

Collector Emitter Cut−off

(VCB = 10 V)

Both Types

(VCB = 75 V)

ICES

−

100

3. Pulse Test: Pulse Width = 300

ms, Duty Cycle = 2.0%.

MMBT5551 Datasheet(PDF) 2 Page - ON Semiconductor

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