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FWZ5VT Datasheet(PDF) 2 Page - FutureWafer Tech Co.,Ltd |
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FWZ5VT Datasheet(HTML) 2 Page - FutureWafer Tech Co.,Ltd |
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2 / 3 page  Rating and characteristic curve Parameter Symbol Condition Min. Typ. Max. Units Reverse Stand-off Voltage VRWM 5.5 V Reverse Breakdown Voltage VBR IZ=1mA Pin2 to 3 6.0 9.0 V Reverse Leakage Current IR@VR=3V Pins 1 to 3. 100 nA Forward Voltage VF IF=10mA 0.7 V Junction Capacitance C I/O Pin capacitance to GND.Vdc=0V,f=1MHZ 1 1.5 pf Figure 1 I/O port to GND capacitance 0 0.5 1 1.5 2 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 VR(V) f=1MHZ,T=25°C Ultra Low Capacitance ESD array FWZ5VT E1506F4C-STD-FW-001 Futurewafer Tech Co., Ltd Electrical Characteristics |
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