A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

7525 ETHEL AVENUE

• NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

1/3

Specifications are subject to change without notice.

SYMBOL

MINIMUM TYPICAL MAXIMUM

UNITS

65

V

65

V

3.5

V

25

mA

10

200

---

ηηηη

C

f = 1025 - 1150 MHz

6.5

40

dB

%

Pulse Width = 10 µsec, Duty Cycle = 1 %

NPN SILICON RF POWER TRANSISTOR

MS2441

DESCRIPTION:

The

transistor, designed for high power and

low duty cycle DME and IFF applications.

FEATURES:

• Internal Input/Output Matching Networks

• P

• Omnigold™ Metalization System

MAXIMUM RATINGS

22 A

65 V

65 V

-65 °C to +200 °C

-65 °C to +150 °C

θθθθ

JC

0.12 °C/W

PACKAGE STYLE .400 2L FLG (A)

COMMON BASE CONFIGURATION

MIN IMU M

inches / m m

.100 / 2.54

.376 / 9.55

.050 / 1.27

.110 / 2.79

B

C

D

E

F

G

A

MA XIMU M

.120 / 3.05

.130 / 3.30

.396 / 10.06

inches / m m

.193 / 4.90

H

DIM

K

L

I

J

.490 / 12.45

.690 / 17.53

.003 / 0.08

.510 / 12.95

.710 / 18.03

.006 / 0.18

N

M

.118 / 3.00

.131 / 3.33

.135 / 3.43

.145 / 3.68

.072 / 1.83

.052 / 1.32

P

.230 / 5.84

G

C

N

2xR

4x .062 x 45°

I

E

P

M

F

L

H

J

K

2xB

D

.040 x 45°

A

.100 / 2.54

.395 / 10.03

.407 / 10.34

.890 / 22.61

.910 / 23.11