TLV9001 datasheet(6/23 Pages) TI1

6 / 23 page

TLV9001, TLV9002, TLV9004

SBOS833 – OCTOBER 2017

www.ti.com

Product Folder Links: TLV9001 TLV9002 TLV9004

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(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±2000

Charged-device model (CDM), per JEDEC specification JESD22-C101(2)

±1000

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

MAX

UNIT

Supply voltage

1.8

5.5

Specified temperature

–40

125

°C

(1)

For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics application report.

6.4 Thermal Information: TLV9002

THERMAL METRIC(1)

TLV9002

UNIT

D (SOIC)

8 PINS

RθJA

Junction-to-ambient thermal resistance

147.4

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

94.3

°C/W

RθJB

Junction-to-board thermal resistance

89.5

°C/W

ψJT

Junction-to-top characterization parameter

47.3

°C/W

ψJB

Junction-to-board characterization parameter

°C/W

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