NCE3018AS datasheet(2/7 Pages) NCEPOWER

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Wuxi NCE Power Semiconductor Co., Ltd

Page

v1.0

NCE3018AS

Pb Free Product

http://www.ncepower.com

Electrical Characteristics (TA=25

unless otherwise noted)

℃

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=250μA

Zero Gate Voltage Drain Current

IDSS

VDS=30V,VGS=0V

μA

Gate-Body Leakage Current

IGSS

VGS=±20V,VDS=0V

±100

On Characteristics

(Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=250μA

0.9

1.1

1.4

VGS=10V, ID=12A

5.5

Drain-Source On-State Resistance

RDS(ON)

VGS=4.5V, ID=10A

6.5

mΩ

Forward Transconductance

gFS

VDS=5V,ID=12A

Dynamic Characteristics

(Note4)

Input Capacitance

Clss

2100

Output Capacitance

Coss

460

Reverse Transfer Capacitance

Crss

VDS=15V,VGS=0V,

F=1.0MHz

230

Switching Characteristics

(Note 4)

Turn-on Delay Time

td(on)

Turn-on Rise Time

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

VDD=10V,ID=12A

VGS=10V,RGEN=2.7Ω

Total Gate Charge

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

VDS=15V,ID=12A,

VGS=10V

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

VSD

VGS=0V,IS=18A

1.2

Diode Forward Current

(Note 2)

Notes:

Repetitive Rating: Pulse width limited by maximum junction temperature.

Surface Mounted on FR4 Board, t ≤ 10 sec.

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

Guaranteed by design, not subject to production

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