FDPF2D3N10C datasheet(3/9 Pages) ONSEMI

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Electrical Characteristics T

J = 25 °C unless otherwise noted.

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Drain-Source Diode Characteristic

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

BVDSS

Drain to Source Breakdown Voltage

ID = 250 μA, VGS = 0 V

100

ΔBV

DSS

ΔT

Breakdown Voltage Temperature

Coefficient

ID = 250 μA, referenced to 25 °C

mV/°C

IDSS

Zero Gate Voltage Drain Current

VDS = 80 V, VGS = 0 V

μA

VDS = 80 V, TJ= 150°C

500

μA

IGSS

Gate to Source Leakage Current

VGS = ±20 V, VDS = 0 V

±100

VGS(th)

Gate to Source Threshold Voltage

VGS = VDS, ID = 700 μA

2.0

3.0

4.0

rDS(on)

Static Drain to Source On Resistance

VGS = 10 V, ID = 100 A

2.1

2.3

gFS

Forward Transconductance

VDS = 5 V, ID = 100 A

222

Ciss

Input Capacitance

VDS = 50 V, VGS = 0 V,

f = 1 MHz

7980

11180

Coss

Output Capacitance

4490

6290

Crss

Reverse Transfer Capacitance

Gate Resistance

0.1

0.8

1.8

td(on)

Turn-On Delay Time

VDD = 50 V, ID = 100 A,

VGS = 10 V, RGEN = 6 Ω

Rise Time

td(off)

Turn-Off Delay Time

118

Fall Time

Total Gate Charge

VGS = 0 V to 10 V

VDD = 50 V,

ID = 100 A

108

152

Qgs

Gate to Source Gate Charge

Qgd

Gate to Drain “Miller” Charge

Qoss

Output Charge

VDD = 50 V, VGS = 0 V

297

Maximum Continuous Drain to Source Diode Forward Current

222

ISM

Maximum Pulsed Drain to Source Diode Forward Current

888

VSD

Source to Drain Diode Forward Voltage

VGS = 0 V, ISD = 100 A

0.9

1.3

trr

Reverse Recovery Time

VGS = 0 V, VDD = 50 V,

IF = 100 A, dIF/dt = 100 A/μs

107

172

Qrr

Reverse Recovery Charge

191

306

trr

Reverse Recovery Time

VGS = 0 V, VDD = 50 V,

IF = 100 A, dIF/dt = 300 A/μs

155

Qrr

Reverse Recovery Charge

492

788

Notes:

1. Pulsed Id please refer to Figure.11 and Figure.12 “Forward Bias Safe Operating Area” for more details.

2. EAS of 1176 mJ is based on starting TJ = 25 °C, L = 3 mH, IAS = 28 A, VDD = 90 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 89 A.

3. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design.

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