ATG778 GATE TURN-OFF THYRISTOR

FINAL SPECIFICATION

nov 06 - ISSUE : 03

0

500

1000

1500

2000

2500

0,6

1,6

2,6

3,6

ON-STATE CHARACTERISTIC

Tj = 125 °C

0

2

4

6

8

10

12

14

16

18

1

10

100

SURGE CHARACTERISTIC

Tj = 125 °C

POSEICO SPA

POwer SEmiconductors Italian COrporation

POSEICO

Distributed by

0,6

1,6

2,6

3,6

On-state Voltage [V]

0

2

4

6

8

10

12

14

16

18

20

0,001

0,01

0,1

1

10

t[s]

TRANSIENT THERMAL IMPEDANCE

DOUBLE SIDE COOLED

1

10

100

n°cycles

All the characteristics given in this data sheet are guaranteed only with uniform

clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm

and roughness < 2 µm.

In the interest of product improvement POSEICO SpA reserves the right to change

any data given in this data sheet at any time without previous notice.

any data given in this data sheet at any time without previous notice.

If not stated otherwise the

maximum value of ratings (simbols over shaded

background) and characteristics is reported.