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2CL200KV Datasheet(PDF) 1 Page - GETAI ELECTRONICS DEVICE CO., LTD |
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2CL200KV Datasheet(HTML) 1 Page - GETAI ELECTRONICS DEVICE CO., LTD |
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1 / 2 page ![]() 2CL200KV/1A 3.0A 200kV Potting Type High Voltage Rectifier Subassembly ----------------------------------------------------------------------------------------------------------------------------- ------ GETE ELECTRONIC CO.,LTD Http://www.getedz.com Http://www.hvgtsemi.com E-mai: sales@getedz.com GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628 FAX:0086-20-8184 9638 2017-10 1 / 2 INTRODUCE: HVGT high voltage silicon rectifier assembly is made of high quality glass passivated chip and high reliability epoxy resin sealing structure, and through professional testing equipment inspection qualified after to customers. FEATURES: 1. High reliability design. 2. High voltage design. 3. High current . 4. Conform to RoHS and SGS. 5. Epoxy resin molded in vacuumHave anticorrosion in the surface. APPLICATIONS: 1. High voltage multiplier circuit 2. High voltage test equipment circuit . 3. General purpose high voltage rectifier. 4. Environmental desulfurization system. MECHANICAL DATA: 1. Case: epoxy resin molding. 2. Terminal: screw holes. 3. Net weight: 1050 grams (approx). SHAPE DISPLAY: SIZE: (Unit:mm) HVGT NAME: HVC-289030 MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings) Items Symbols Condition Data Value Units Repetitive Peak Renerse Voltage VRRM TA=25°C 200 kV Non-Repetitive Peak Renerse Voltage VRSM TA=25°C 240 kV Average Forward Current Maximum IFAVM TA=25°C 3.0 A TOIL=55°C -- A Non-Repetitive Forward Surge Current IFSM TA=25°C; 60Hz Half-Sine Wave; 8.3mS 60 A Junction Temperature TJ 125 °C Allowable Operation Case Temperature Tc -40~+125 °C Storage Temperature TSTG -40~+150 °C ELECTRICAL CHARACTERISTICS: TA=25°C (Unless Otherwise Specified) Items Symbols Condition Data value Units Maximum Forward Voltage Drop VFM at 25°C; at IFAVM 240 V Maximum Reverse Current IR1 at 25°C; at VRRM 5.0 uA IR2 at 100°C; at VRRM 50 uA Maximum Reverse Recovery Time TRR at 25°C; IF=0.5IR; IR=IFAVM; IRR=0.25IR -- nS Junction Capacitance CJ at 25°C; VR=0V; f=1MHz -- pF |
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