SP8255 datasheet(1/7 Pages) SAMHOP

Part #	SP8255

Description	Dual N-Channel Enhancement Mode Field Effect Transistor

PDF	7 Pages

Scroll/Zoom	100%

Manufacturer	SAMHOP [SamHop Microelectronics Corp.]

Direct Link	http://www.samhop.com.tw

Logo

1 / 7 page

Suface Mount Package.

S mHop Microelectronics C orp.

a

SP8255

Symbol

VDS

VGS

IDM

75

W

A

PD

°C

1.67

-55 to 150

ID

Units

Parameter

20

7

34

°C/W

V

±12

TA=25°C

Gate-Source Voltage

Drain-Source Voltage

THERMAL CHARACTERISTICS

PRODUCT SUMMARY

VDSS

ID

RDS(ON) (m

Ω) Max

20V

7A

16.0

@

VGS=4.0V

15.0

@

VGS=4.5V

FEATURES

Super high dense cell design for low RDS(ON).

Rugged and reliable.

ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)

Limit

Drain Current-Continuous

a

-Pulsed c

A

Maximum Power Dissipation

a

Operating Junction and Storage

Temperature Range

TJ, TSTG

Thermal Resistance, Junction-to-Ambient

R JA

www.samhop.com.tw

Feb,21,2014

1

Details are subject to change without notice.

TA=25°C

TA=70°C

A

TA=70°C

W

Dual N-Channel Enhancement Mode Field Effect Transistor

Green

Product

ESD Protected.

G2

S1

G1

S2

1

2

3

4

5

6

Bottom Drain Contact

5.6

1.07

18.0

@

VGS=3.1V

23.0

@

VGS=2.5V

16.5

@

VGS=3.7V

DF N 2X 5

(Bottom view)

G1

S1

G2

S2

D1/D2

Ver 1.1

c

5.5

°C/W

Thermal Resistance, Junction-to-Case

R JC

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SP8255 Datasheet(PDF) 1 Page - SamHop Microelectronics Corp.

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