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IL2 Datasheet(PDF) 3 Page - Vishay Siliconix |
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IL2 Datasheet(HTML) 3 Page - Vishay Siliconix |
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3 / 9 page ![]() IL1/ IL2/ IL5 Document Number 83612 Rev. 1.5, 26-Oct-04 Vishay Semiconductors www.vishay.com 3 Output Coupler Current Transfer Ratio Switching Non-saturated Parameter Test condition Symbol Min Typ. Max Unit Collector-emitter capacitance VCE = 5.0 V, f = 1.0 MHz CCE 6.8 pF Collector - base capacitance VCB = 5.0 V, f = 1.0 MHz CCB 8.5 pF Emitter - base capacitance VEB = 5.0 V, f = 1.0 MHz CEB 11 pF Collector-emitter leakage current VCE = 10 V ICEO 5.0 50 nA Collector-emitter saturation voltage ICE = 1.0 mA, IB = 20 µAVCESAT 0.25 V Base-emitter voltage VCE = 10 V, IB = 20 µAVBE 0.65 V DC forward current gain VCE = 10 V, IB = 20 µA HFE 200 650 1800 DC forward current gain saturated VCE = 0.4 V, IB = 20 µAHFEsat 120 400 600 Thermal resistance junction to lead Rthjl 500 K/W Parameter Test condition Symbol Min Typ. Max Unit Capacitance (input-output) VI-O = 0 V, f = 1.0 MHz CIO 0.6 pF Insulation resistance VI-O = 500 V RS 1014 Ω Parameter Test condition Part Symbol Min Typ. Max Unit Current Transfer Ratio (collector-emitter saturated) IF = 10 mA, VCE = 0.4 V IL1 CTRCEsat 75 % IL2 CTRCEsat 170 % IL5 CTRCEsat 100 % Current Transfer Ratio (collector-emitter) IF = 10 mA, VCE = 10 V IL1 CTRCE 20 80 300 % IL2 CTRCE 100 200 500 % IL5 CTRCE 50 130 400 % Current Transfer Ratio (collector-base) IF = 10 mA, VCB = 9.3 V IL1 CTRCB 0.25 % IL2 CTRCB 0.25 % IL5 CTRCB 0.25 % Parameter Current Delay Rise time Storage Fall time Propagation H-L Propagation L-H Test condition VCE = 5.0 V, RL = 75 Ω, tP measured at 50 % of output Symbol IF tD tr tS tf tPHL tPLH Unit mA µs µs µs µs µs µs IL1 20 0.8 1.9 0.2 1.4 0.7 1.4 IL2 4.0 1.7 2.6 0.4 2.2 1.2 2.3 IL5 10 1.7 2.6 0.4 2.2 1.1 2.5 |
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