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TK3R1A04PL Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # TK3R1A04PL
Description  isc N-Channel MOSFET Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

TK3R1A04PL Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
iscN-Channel MOSFET Transistor
TK3R1A04PL，ITK3R1A04PL
·
FEATURES
·
Low drain-source on-resistance:
RDS(ON) = 2.5mΩ (typ.) (VGS = 10 V)
·
Enhancement mode:
Vth = 1.4 to 2.4V (VDS = 10 V, ID=0.5mA)
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·
DESCRITION
·
Switching Voltage Regulators
·
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage
±
20
V
ID
Drain Current-Continuous
82
A
IDM
Drain Current-Single Pulsed
400
A
PD
Total Dissipation @TC=25℃
36
W
Tj
Max. Operating Junction Temperature
175
℃
Tstg
Storage Temperature
-55~175
℃
·
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth(ch-c)
Channel-to-case thermal resistance
4.16
℃
/W
Rth(ch-a)
Channel-to-ambient thermal resistance
62.5
℃
/W


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