| Manufacturer | Part # | Datasheet | Description |
Sanyo Semicon Device |
2SC4709
|
99Kb/3P
|
High-Voltage Amplifier, High-Voltage Switching Applications
|
| Search Partnumber :
Start with "2SC4709" -
Total : 100 ( 1/5 Page) |
Hitachi Semiconductor |
2SC4702
|
31Kb/6P |
Silicon NPN Epitaxial
|
Renesas Technology Corp |
2SC4702
|
72Kb/6P |
Silicon NPN Epitaxial
|
Guangdong Kexin Industr... |
2SC4702
|
35Kb/1P |
Silicon NPN Epitaxial
|
Renesas Technology Corp |
2SC4702
|
106Kb/7P |
Silicon NPN Epitaxial
|
|
2SC4702XV-TR-E
|
72Kb/6P |
Silicon NPN Epitaxial
|
|
2SC4702XV-TR-E
|
106Kb/7P |
Silicon NPN Epitaxial
|
|
2SC4702XV-TR-H
|
106Kb/7P |
Silicon NPN Epitaxial
|
|
2SC4702
|
106Kb/7P |
Silicon NPN Epitaxial
|
|
2SC4702
|
150Kb/7P |
Silicon NPN Epitaxial
|
NEC |
2SC4703
|
66Kb/8P |
MICROWAVE LOW NOISE, LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
|
Renesas Technology Corp |
2SC4703
|
181Kb/9P |
NPN EPITAXIAL SILICON RF TRANSISTOR FOR
|
California Eastern Labs |
2SC4703
|
163Kb/7P |
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD
|
Inchange Semiconductor ... |
2SC4703
|
269Kb/2P |
isc Silicon NPN RF Transistor
|
Renesas Technology Corp |
2SC4703-A
|
137Kb/2P |
RF & Microwave device
|
|
2SC4703-T1
|
181Kb/9P |
NPN EPITAXIAL SILICON RF TRANSISTOR FOR
|
California Eastern Labs |
2SC4703-T1
|
163Kb/7P |
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD
|
Renesas Technology Corp |
2SC4703
|
181Kb/9P |
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD
|
Sanyo Semicon Device |
2SC4705
|
85Kb/3P |
Low-Frequency General-Purpose Amp, Applications(High hFE)
|
Guangdong Kexin Industr... |
2SC4705
|
51Kb/2P |
NPN Epitaxial Planar Silicon Transistor
|
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