| Manufacturer | Part # | Datasheet | Description |
Infineon Technologies A... |
IPD130N10NF2S
|
909Kb/11P
|
StrongIRFETTM 2 Power-Transistor
Rev. 2.2, 2022-10-10
|
| Search Partnumber :
Start with "IPD130N10NF2S" -
Total : 83 ( 1/5 Page) |
Guangdong Youtai Semico... |
IPD135N03
|
455Kb/8P |
30V N -Channel MOSFET
|
Inchange Semiconductor ... |
IPD135N03L
|
334Kb/2P |
N-Channel MOSFET Transistor
|
Infineon Technologies A... |
IPD135N03L-G
|
536Kb/12P |
OptiMOS 3 Power-Transistor Features Optimized technology for DC/DC converters
Rev. 1.0 2006-10-23 |
|
IPD135N03L-G
|
1Mb/12P |
OptiMOS3 Power-Transistor
2010-04-01 revision:2.1 |
|
IPD135N03LG
|
536Kb/12P |
OptiMOS 3 Power-Transistor Features Optimized technology for DC/DC converters
Rev. 1.0 2006-10-23 |
|
IPD135N03LG
|
1Mb/12P |
OptiMOS3 Power-Transistor
2010-04-01 revision:2.1 |
Guangdong Youtai Semico... |
IPD135N03LG
|
455Kb/8P |
30V N -Channel MOSFET
|
Infineon Technologies A... |
IPD135N03LG
|
1Mb/12P |
OptiMOS3 Power-Transistor
2010-04-01 revision:2.1 |
Inchange Semiconductor ... |
IPD135N08N3
|
336Kb/2P |
N-Channel MOSFET Transistor
|
Infineon Technologies A... |
IPD135N08N3G
|
445Kb/9P |
OptiMOS3 Power-Transistor
2008-06-24 revision:2.1 |
|
IPD135N08N3G
|
360Kb/9P |
Ideal for high frequency switching
Rev. 2.2 2014-05-19 |
|
IPD135N08N3G
|
360Kb/9P |
Ideal for high frequency switching
Rev. 2.2 2014-05-19 |
|
IPD13N03LA
|
348Kb/10P |
OptiMOS 2 Power-Transistor
2004-02-04 |
|
IPD13N03LA
|
413Kb/11P |
OptiMOS 2 Power-Transistor
Rev. 1.7 2004-05-24 |
|
IPD13N03LA
|
403Kb/12P |
OptiMOS짰2 Power-Transistor
Rev. 2.0 2006-05-11 |
|
IPD13N03LAG
|
403Kb/12P |
OptiMOS짰2 Power-Transistor
Rev. 2.0 2006-05-11 |
Samtec, Inc |
IPD1-02-D
|
269Kb/2P |
.100 SHROUDED CONTACT BODY
|
|
IPD1-02-D-K
|
269Kb/2P |
100 SHROUDED CONTACT BODY
|
|
IPD1-02-D-K-M
|
260Kb/1P |
(2.54 mm) .100
Rev 21DEC21 |
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