IRF9530 Datasheet, PDF - Alldatasheet

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IRF9530 Datasheet, PDF

Search Partnumber : Match&Start with "IRF9530" - Total : 56 ( 1/3 Page)

Manufacturer	Part #	Datasheet	Description
Samsung semiconductor	IRF9530	508Kb/12P	P-CHANNEL POWER MOSFETS
Samsung semiconductor	IRF9530	378Kb/6P	P-CHANNEL POWER MOSFETS
Vishay Siliconix	IRF9530	566Kb/8P	Power MOSFET 16-Jun-08
Vishay Siliconix	IRF9530	158Kb/8P	Power MOSFET 16-Aug-2021
Intersil Corporation	IRF9530	63Kb/7P	12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs July 1999
International Rectifier	IRF9530	449Kb/6P	TRANSISTORS
Inchange Semiconductor ...	IRF9530	303Kb/2P	isc P-Channel Mosfet Transistor
SYC Electronica	IRF9530	155Kb/6P	12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs
Guangdong Kexin Industr...	IRF9530	1Mb/3P	P-Channel MOSFET
List of Unclassifed Man...	IRF9530	2Mb/31P	SEMICONDUCTORS
Seme LAB	IRF9530-220M	18Kb/2P	P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
International Rectifier	IRF9530N	113Kb/8P	Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)
Kersemi Electronic Co.,...	IRF9530N	2Mb/7P	Advanced Process Technology
Inchange Semiconductor ...	IRF9530N	335Kb/2P	P-Channel MOSFET Transistor
International Rectifier	IRF9530NL	173Kb/10P	Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)
Kersemi Electronic Co.,...	IRF9530NL	1Mb/10P	Advanced Process Technology
Inchange Semiconductor ...	IRF9530NL	273Kb/2P	isc P-Channel MOSFET Transistor
International Rectifier	IRF9530NLPBF	758Kb/10P	Advanced Process Technology Surface Mount
	IRF9530NLPBF	767Kb/11P	Advanced Process Technology
	IRF9530NPBF	123Kb/9P	HEXFET짰 Power MOSFET

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IRF9530 Datasheet, PDF [Distributor]

Distributor	Part #	Manufacturer Datasheet	Description	Buy Now
Element14	IRF9530PBF-BE3	VISHAY	MOSFET, P-CH, 100V, 12A, TO-220AB; Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous...

Brief Description of IRF9530

The IRF9530 is a P-channel MOSFET, which is a type of transistor used for amplifying or switching electronic signals. Unlike its N-channel counterparts, P-channel MOSFETs source current when the voltage applied to the gate is less than the source voltage (negative gate-source voltage for enhancement mode devices). They are commonly used in applications where load switching is controlled by the ground or negative side of the circuit.

Key characteristics of the IRF9530 include:

VDSS (Drain-Source Breakdown Voltage): This is the maximum voltage that can be applied from drain to source with the gate shorted to the source, which for the IRF9530 is typically around -100V.

ID (Continuous Drain Current): The IRF9530 can handle a significant amount of continuous current, often rated at around -12A, making it suitable for high-current applications.

RDS(on) (Drain-Source On-Resistance): The on-state resistance between the drain and the source when the MOSFET is turned on; for the IRF9530, this is relatively low, which helps reduce power losses.

VGS(th) (Gate Threshold Voltage): The voltage at which the MOSFET starts to turn on, which for P-channel devices like the IRF9530, is a negative voltage, usually around -2V to -4V.

Power Dissipation: The maximum amount of power the IRF9530 can dissipate is important for understanding thermal limitations, and it's typically around 48W.

Package: It's available in TO-220 and similar packages that are commonly used for power devices.

Operating Temperature: The operating temperature range is a factor for stability and reliability, and for the IRF9530, it's generally between -55°C and +150°C.

P-channel MOSFETs like the IRF9530 are useful in creating simpler drive circuits, especially in high-side switching configurations, since they don't require a charge pump or other complex drive circuitry to apply a positive gate-source voltage. They are common in power management circuits, motor controls, and other power-switching applications.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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