| Manufacturer | Part # | Datasheet | Description |
VBsemi Electronics Co.,... |
VB1307N
|
651Kb/9P
|
N-Channel 30-V (D-S) MOSFET
|
| Search Partnumber :
Start with "VB1307N" -
Total : 100 ( 1/5 Page) |
France Joint |
VB130X145X7
|
384Kb/5P |
STANDARD SHAFT SEALS
|
VBsemi Electronics Co.,... |
VB1330
|
645Kb/9P |
N-Channel 30-V (D-S) MOSFET
|
|
VB1330
|
658Kb/9P |
N-Channel 30-V (D-S) MOSFET
|
|
VB1330X
|
650Kb/9P |
N-Channel 30-V (D-S) MOSFET
|
|
VB1330X
|
664Kb/9P |
N-Channel 30-V (D-S) MOSFET
|
|
VB1330X
|
664Kb/9P |
N-Channel 30-V (D-S) MOSFET
|
|
VB1330
|
658Kb/9P |
N-Channel 30-V (D-S) MOSFET
|
France Joint |
VB13X20X5
|
384Kb/5P |
STANDARD SHAFT SEALS
|
|
VB13X32X10.5
|
384Kb/5P |
STANDARD SHAFT SEALS
|
New Jersey Semi-Conduct... |
VB10
|
102Kb/1P |
These rectifiers offer high voltage ranges in minimum-sized
|
Emerson Network Power |
VB10-2051
|
269Kb/2P |
BNC Crlmp Plug for RG58
|
Vishay Siliconix |
VB10150C
|
168Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A
19-May-08 |
|
VB10150C
|
161Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09 |
|
VB10150C
|
723Kb/5P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier
16-Aug-13 |
Inchange Semiconductor ... |
VB10150C-E3
|
314Kb/2P |
Schotty Barrier Diode
|
Vishay Siliconix |
VB10150C-E3-4W
|
161Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09 |
|
VB10150C-E3-8W
|
161Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09 |
|
VB10150C-E3/4W
|
168Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.63 V at IF = 3 A
19-May-08 |
|
VB10150C-E3/4W
|
168Kb/5P |
High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09 |
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