| Manufacturer | Part # | Datasheet | Description |
 VBsemi Electronics Co.,... |
VB2703K
|
756Kb/7P
|
P-Channel 70 V (D-S) MOSFET
|
|
VB2703K
|
752Kb/7P
|
P-Channel 70 V (D-S) MOSFET
|
|
VB2703K
|
752Kb/7P
|
P-Channel 70 V (D-S) MOSFET
|
| Search Partnumber :
Start with "VB2703K" -
Total : 102 ( 1/6 Page) |
 VBsemi Electronics Co.,... |
VB2703K
|
752Kb/7P |
P-Channel 70 V (D-S) MOSFET
|
 France Joint |
VB27X35X4
|
384Kb/5P |
STANDARD SHAFT SEALS
|
 Turck, Inc. |
VB2-FKM-FKM-FSM57
|
215Kb/2P |
Accessories for Fieldbus Systems
2017-09-15 |
|
VB2-FSW/FKW/FSW-45
|
38Kb/1P |
PROFIBUS-DP Splitter – 2 Branch
06/07/2023 |
 BLOCK Transformatoren-E... |
VB2.3/2/6
|
356Kb/2P |
Safety isolating transformer
|
|
VB2.3/2/9
|
356Kb/2P |
Safety isolating transformer
|
 Vishay Siliconix |
VB20100C
|
167Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A
31-Jul-08 |
|
VB20100C
|
161Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09 |
|
VB20100C
|
164Kb/5P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A
16-Aug-13 |
|
VB20100C
|
151Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
14-Aug-13 |
|
VB20100C
|
104Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A
19-Jun-2018 |
 Inchange Semiconductor ... |
VB20100C
|
315Kb/2P |
Schotty Barrier Diode
|
 Vishay Siliconix |
VB20100C-E3
|
167Kb/6P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A
13-Dec-16 |
|
VB20100C-E3
|
214Kb/6P |
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A
18-Jun-2018 |
 Inchange Semiconductor ... |
VB20100C-E3
|
315Kb/2P |
Schotty Barrier Diode
|
 Vishay Siliconix |
VB20100C-E3-4W
|
161Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09 |
|
VB20100C-E3-8W
|
161Kb/5P |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
24-Jun-09 |