| Manufacturer | Part # | Datasheet | Description |
Quanzhou Jinmei Electro... |
2SC5404
|
154Kb/3P |
Silicon NPN Power Transistors
|
|
2SC5404_2015
|
154Kb/3P |
Silicon NPN Power Transistors
|
Panasonic Semiconductor |
2SC5405
|
37Kb/2P |
Silicon NPN triple diffusion planar type
|
|
2SC5406
|
37Kb/2P |
Silicon NPN triple diffusion mesa type(For horizontal deflection output)
|
|
2SC5406A
|
37Kb/2P |
Silicon NPN triple diffusion mesa type(For horizontal deflection output)
|
|
2SC5407
|
36Kb/2P |
Silicon NPN triple diffusion mesa type(For horizontal deflection output)
|
Inchange Semiconductor ... |
2SC5407
|
244Kb/2P |
isc Silicon NPN Power Transistor
|
NEC |
2SC5408
|
50Kb/8P |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION
|
|
2SC5408-T1
|
50Kb/8P |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION
|
|
2SC5409
|
39Kb/8P |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION
|
|
2SC5409-T1
|
39Kb/8P |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION
|
Toshiba Semiconductor |
2SC5411
|
229Kb/5P |
NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)
|
Inchange Semiconductor ... |
2SC5411
|
259Kb/2P |
isc Silicon NPN Power Transistor
|
Panasonic Semiconductor |
2SC5412
|
37Kb/2P |
Silicon NPN triple diffusion mesa type
|
Sanyo Semicon Device |
2SC5414
|
47Kb/6P |
High-Frequency Low-Noise Amplifier Applications
|
|
2SC5414A
|
54Kb/6P |
High-Frequency Low-Noise Amplifier Applications
|
|
2SC5415
|
47Kb/6P |
High-Frequency Low-Noise Amplifier Applications
|
|
2SC5415A
|
98Kb/6P |
High-Frequency Low-Noise Amplifier Applications
|
|
2SC5415A
|
398Kb/8P |
High-Frequency Low-Noise Amplifier Applications
|
ON Semiconductor |
2SC5415A
|
296Kb/8P |
RF Transistor 12V, 100mA, fT=6.7GHz, NPN Single PCP
August, 2013 |
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