| Manufacturer | Part # | Datasheet | Description |
Advanced Power Electron... |
AP50T10GH,J-HF
|
103Kb/4P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
AP50T10GH-HF
|
70Kb/5P |
Fast Switching Characteristic
|
|
AP50T10GH-HF
|
103Kb/4P |
Simple Drive Requirement
|
|
AP50T10GH-HF
|
70Kb/5P |
Fast Switching Characteristic
|
|
AP50T10GI-HF
|
64Kb/4P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
AP50T10GI-HF
|
64Kb/4P |
Simple Drive Requirement
|
|
AP50T10GI-HF
|
64Kb/4P |
Simple Drive Requirement
|
|
AP50T10GI-HF
|
63Kb/5P |
Fast Switching Characteristic
|
|
AP50T10GJ-HF
|
70Kb/5P |
Fast Switching Characteristic
|
SHENZHEN DOINGTER SEMIC... |
AP50T10GJ-HF
|
531Kb/4P |
N-Channel MOSFET uses advanced trench technology
|
Advanced Power Electron... |
AP50T10GM-HF
|
100Kb/4P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
SHENZHEN DOINGTER SEMIC... |
AP50T10GM-HF
|
614Kb/4P |
N-Channel MOSFET uses advanced trench technology
|
Advanced Power Electron... |
AP50T10GM-HF
|
100Kb/4P |
Single Drive Requirement
|
|
AP50T10GM-HF
|
54Kb/5P |
Simple Drive Requirement
|
|
AP50T10GP-HF
|
100Kb/4P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
SHENZHEN DOINGTER SEMIC... |
AP50T10GP-HF
|
511Kb/3P |
N-Channel MOSFET uses advanced trench technology
|
Advanced Power Electron... |
AP50T10GP-HF
|
100Kb/4P |
Simple Drive Requirement
|
|
AP50T10GP-HF
|
53Kb/5P |
Fast Switching Characteristic
|
|
AP50T10GS-HF
|
100Kb/4P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
AP50T10GS-HF
|
100Kb/4P |
Simple Drive Requirement
|
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