| Manufacturer | Part # | Datasheet | Description |
 Inchange Semiconductor ... |
AP9997GH
|
330Kb/2P |
isc N-Channel MOSFET Transistor
|
 Advanced Power Electron... |
AP9997GH-HF
|
102Kb/4P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
AP9997GH-HF
|
105Kb/5P |
Simple Drive Requirement
|
 VBsemi Electronics Co.,... |
AP9997GH-HF
|
1,010Kb/7P |
N-Channel 100 V (D-S) MOSFET
|
 SHENZHEN DOINGTER SEMIC... |
AP9997GH-HF
|
1Mb/4P |
N-Channel MOSFET uses advanced trench technology
|
 Advanced Power Electron... |
AP9997GH-HF
|
102Kb/4P |
Simple Drive Requirement
|
|
AP9997GH-HF
|
105Kb/5P |
Simple Drive Requirement
|
|
AP9997GJ-HF
|
102Kb/4P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
AP9997GJ-HF
|
105Kb/5P |
Simple Drive Requirement
|
 SHENZHEN DOINGTER SEMIC... |
AP9997GJ-HF
|
618Kb/4P |
N-Channel MOSFET uses advanced trench technology
|
 Advanced Power Electron... |
AP9997GJ-HF
|
102Kb/4P |
Simple Drive Requirement
|
|
AP9997GK-HF
|
100Kb/4P |
Simple Drive Requirement
|
|
AP9997GK-HF
|
70Kb/5P |
Simple Drive Requirement
|
 TECH PUBLIC Electronics... |
AP9997GK-TP
|
1Mb/4P |
N-Channel Enhancement Mode Power MOSFET
|
 Advanced Power Electron... |
AP9997GM
|
188Kb/5P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
AP9997GM
|
66Kb/5P |
Simple Drive Requirement
|
|
AP9997GP
|
152Kb/5P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
AP9997GP-HF
|
99Kb/4P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
AP9997GP-HF
|
99Kb/4P |
Simple Drive Requirement
|
|
AP9997GP-HF
|
103Kb/5P |
Simple Drive Requirement
|