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BD140 Datasheet, PDF

Search Partnumber : Match&Start with "BD140" - Total : 92 ( 1/5 Page)

Manufacturer	Part #	Datasheet	Description
STMicroelectronics	BD140	148Kb/9P	Complementary low voltage transistor 22-May-2008
NXP Semiconductors	BD140	44Kb/8P	PNP power transistors 1999 Apr 12
STMicroelectronics	BD140	44Kb/4P	PNP SILICON TRANSISTORS Jun-1997
STMicroelectronics	BD140	158Kb/9P	Complementary low voltage transistor 22-May-2008
ON Semiconductor	BD140	42Kb/4P	Plastic Medium Power Silicon PNP Transistor April, 2005 ??Rev. 12
STMicroelectronics	BD140	76Kb/4P	PNP SILICON TRANSISTORS Nov-2001
STMicroelectronics	BD140	157Kb/9P	Complementary low voltage transistor 22-May-2008
TRANSYS Electronics Lim...	BD140	53Kb/2P	PNP PLASTIC POWER TRANSISTORS
TRANSYS Electronics Lim...	BD140	57Kb/1P	Plastic-Encapsulated Transistors
Unisonic Technologies	BD140	88Kb/2P	PNP SILICON TRANSISTOR
Savantic, Inc.	BD140	111Kb/3P	Silicon PNP Power Transistors
Fairchild Semiconductor	BD140	41Kb/4P	Medium Power Linear and Switching Applications
KEC(Korea Electronics)	BD140	36Kb/2P	EPITAXIAL PLANAR PNP TRANSISTOR
Tiger Electronic Co.,Lt...	BD140	59Kb/1P	Complementary Silicon Power Ttransistors
Comset Semiconductor	BD140	74Kb/3P	SILICON PLANAR EPITAXIAL POWER TRANSISTORS.
Fairchild Semiconductor	BD140	47Kb/4P	Medium Power Linear and Switching Applications
Shanghai Shunye Electro...	BD140	194Kb/2P	PNP General Purpose Transistor V2.22
Siemens Semiconductor G...	BD140	188Kb/5P	PNP SILICON TRANSISTORS
Fairchild Semiconductor	BD140	47Kb/4P	PNP Epitaxial Silicon Transistor
Savantic, Inc.	BD140	112Kb/3P	Silicon NPN Power Transistors

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Brief Description of BD140

The BD140 is a PNP (Positive-Negative-Positive) bipolar junction transistor (BJT) commonly used for amplification and switching applications in electronic circuits. It is part of the BD series of transistors. Here are some key features and specifications of the BD140:

Type: PNP Bipolar Junction Transistor (BJT).

Polarity:

PNP transistors like the BD140 have a different structure than NPN transistors. In a PNP transistor, the current flows from the emitter to the collector when a positive voltage is applied to the base.
Collector-Base Voltage (V_CBO):

The maximum voltage that can be applied between the collector and the base while keeping the emitter open-circuited.
Collector-Emitter Voltage (V_CEO):

The maximum voltage that can be applied between the collector and the emitter while keeping the base open-circuited.
Emitter-Base Voltage (V_EBO):

The maximum voltage that can be applied between the emitter and the base while keeping the collector open-circuited.
Collector Current (I_C):

The maximum current that can flow through the collector terminal.
Power Dissipation (P_D):

The maximum power that the transistor can dissipate without damage.
Gain (hfe or Beta):

The current gain of the transistor, which represents the ratio of collector current to base current.
Transition Frequency (fT):

The frequency at which the current gain starts to decrease significantly.
Applications:

Common applications include audio amplification, voltage regulation, and general-purpose switching.
Package:

The BD140 is commonly available in a TO-126 package, which is a three-lead, plastic package with the emitter, base, and collector leads.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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