| Manufacturer | Part # | Datasheet | Description |
Fairchild Semiconductor |
FDB12N50F
|
597Kb/8P |
N-Channel MOSFET, FRFET 500V, 11.5A, 0.7廓
|
VBsemi Electronics Co.,... |
FDB12N50F
|
1Mb/10P |
N-Channel 65 0V (D-S)Power MOSFET
|
Inchange Semiconductor ... |
FDB12N50F
|
331Kb/2P |
isc N-Channel MOSFET Transistor
|
Fairchild Semiconductor |
FDB12N50F
|
377Kb/8P |
N-Channel MOSFET, FRFET 500V, 11.5A, 0.7廓
|
|
FDB12N50U
|
638Kb/8P |
N-Channel MOSFET, FRFET 500V, 10A, 0.8廓
|
Inchange Semiconductor ... |
FDB12N50U
|
332Kb/2P |
isc N-Channel MOSFET Transistor
|
Fairchild Semiconductor |
FDB12N50UTM
|
354Kb/8P |
N-Channel MOSFET, FRFET 500V, 10A, 0.8廓
|
|
FDB12N50U
|
354Kb/8P |
N-Channel MOSFET, FRFET 500V, 10A, 0.8廓
|
|
FDB12N50
|
366Kb/9P |
N-Channel MOSFET 500V, 11.5A, 0.65廓
|
|
FDB12N50
|
438Kb/8P |
Optimized Switch for Discontinuous Current Mode Power Factor Correction
|
Inchange Semiconductor ... |
FDB12N50
|
331Kb/2P |
isc N-Channel MOSFET Transistor
|
Fairchild Semiconductor |
FDB120N10
|
508Kb/8P |
N-Channel PowerTrench짰 MOSFET 100V, 74A, 12m廓
|
Inchange Semiconductor ... |
FDB120N10
|
400Kb/2P |
isc N-Channel MOSFET Transistor
|
Galaxy Semi-Conductor H... |
FDB101
|
84Kb/2P |
SILICON BRIDGE RECTIFIERS
|
Shenzhen Luguang Electr... |
FDB101
|
161Kb/2P |
Silicon Bridge Rectifiers
|
Diode Semiconductor Kor... |
FDB101
|
157Kb/2P |
SILICON BRIDGE RECTIFIERS
|
Galaxy Semi-Conductor H... |
FDB101
|
143Kb/3P |
RECOVERY BRIDGE RECTIFIER
|
|
FDB101S
|
136Kb/2P |
SILICON BRIDGE RECTIFIERS
|
Shenzhen Luguang Electr... |
FDB101S
|
171Kb/2P |
Silicon Bridge Rectifiers
|
SeCoS Halbleitertechnol... |
FDB101S
|
192Kb/2P |
Voltage 50V ~ 1000V1.0 Amp Silicon Bridge Rectifiers
|
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