| Manufacturer | Part # | Datasheet | Description |
 IP SEMICONDUCTOR CO., L... |
IPT08Q06-CEA
|
214Kb/4P |
High current density due to double mesa technology
|
|
IPT08Q06-CEB
|
214Kb/4P |
High current density due to double mesa technology
|
|
IPT08Q06-CED
|
215Kb/5P |
High current density due to double mesa technology
|
|
IPT08Q06-CEI
|
218Kb/4P |
High current density due to double mesa technology
|
|
IPT08Q06-BEA
|
214Kb/4P |
High current density due to double mesa technology
|
|
IPT08Q06-BEB
|
214Kb/4P |
High current density due to double mesa technology
|
|
IPT08Q06-BED
|
215Kb/5P |
High current density due to double mesa technology
|
|
IPT08Q06-BEF
|
216Kb/4P |
High current density due to double mesa technology
|
|
IPT08Q06-BEI
|
218Kb/4P |
High current density due to double mesa technology
|
|
IPT08Q08-BEA
|
214Kb/4P |
High current density due to double mesa technology
|
|
IPT08Q08-BEB
|
214Kb/4P |
High current density due to double mesa technology
|
|
IPT08Q08-BED
|
215Kb/5P |
High current density due to double mesa technology
|
|
IPT08Q08-BEF
|
216Kb/4P |
High current density due to double mesa technology
|
|
IPT08Q08-BEI
|
218Kb/4P |
High current density due to double mesa technology
|
|
IPT08Q08-CEA
|
214Kb/4P |
High current density due to double mesa technology
|
|
IPT08Q08-CEB
|
214Kb/4P |
High current density due to double mesa technology
|
|
IPT08Q08-CED
|
215Kb/5P |
High current density due to double mesa technology
|
|
IPT08Q08-CEF
|
216Kb/4P |
High current density due to double mesa technology
|
|
IPT08Q08-CEI
|
218Kb/4P |
High current density due to double mesa technology
|
|
IPT0806-10A
|
216Kb/4P |
High current density due to double mesa technology
|