| Manufacturer | Part # | Datasheet | Description |
 Vishay Siliconix |
SIS426DN
|
112Kb/7P |
N-Channel 20-V (D-S) MOSFET
21-Sep-09 |
 Vishay Telefunken |
SIS426DN
|
535Kb/13P |
N-Channel 20-V (D-S) MOSFET
|
 Vishay Siliconix |
SIS426DN-T1-GE3
|
112Kb/7P |
N-Channel 20-V (D-S) MOSFET
21-Sep-09 |
|
SIS427EDN
|
567Kb/13P |
P-Channel 30-V (D-S) MOSFET
13-May-13 |
|
SIS427EDN-T1-GE3
|
581Kb/13P |
P-Channel 30 V (D-S) MOSFET
13-May-13 |
|
SIS427EDN
|
581Kb/13P |
P-Channel 30 V (D-S) MOSFET
13-May-13 |
|
SIS429DNT
|
196Kb/9P |
P-Channel 30 V (D-S) MOSFET
30-Sep-2019 |
 ELESTA GmbH |
SIS4-SENS
|
283Kb/1P |
SIS 4 sensitive Series
|
 Vishay Siliconix |
SIS402DN
|
126Kb/7P |
N-Channel 30-V (D-S) MOSFET
04-Aug-08 |
|
SIS402DN
|
563Kb/13P |
N-Channel 30-V (D-S) MOSFET
15-Jun-09 |
 Vishay Telefunken |
SIS402DN
|
555Kb/13P |
N-Channel 30-V (D-S) MOSFET
|
 SHENZHEN DOINGTER SEMIC... |
SIS402DN
|
1Mb/4P |
N-Channel MOSFET uses advanced trench technology
|
 Vishay Siliconix |
SIS402DN
|
561Kb/13P |
N-Channel 30-V (D-S) MOSFET
15-Jun-09 |
|
SIS402DN-T1-GE3
|
563Kb/13P |
N-Channel 30-V (D-S) MOSFET
15-Jun-09 |
|
SIS402DN
|
563Kb/13P |
N-Channel 30-V (D-S) MOSFET
15-Jun-09 |
|
SIS402DN
|
561Kb/13P |
N-Channel 30-V (D-S) MOSFET
15-Jun-09 |
|
SIS406DN
|
546Kb/13P |
N-Channel 30-V (D-S) MOSFET
22-Sep-08 |
 Vishay Telefunken |
SIS406DN
|
538Kb/13P |
N-Channel 30-V (D-S) MOSFET
|
 Vishay Siliconix |
SIS406DN
|
606Kb/13P |
N-Channel 30 V (D-S) MOSFET
22-Sep-08 |
|
SIS406DN-T1-GE3
|
546Kb/13P |
N-Channel 30-V (D-S) MOSFET
22-Sep-08 |