CG2H40010P Datasheet(PDF) - Cree, Inc

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CG2H40010P Datasheet (PDF) - Cree, Inc

CG2H40010P Datasheet PDF - Cree, Inc


Part #	CG2H40010P

Download	CG2H40010P Download

File Size	2184.76 Kbytes

Page	14 Pages

Manufacturer	CREE [Cree, Inc]

Direct Link	http://www.cree.com/

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Description

10 W, DC - 6 GHz, RF Power GaN HEMT

CG2H40010P Datasheet (PDF)

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CG2H40010P Datasheet PDF - Cree, Inc


Part #	CG2H40010P

Download	CG2H40010P Click to download

File Size	2184.76 Kbytes

Page	14 Pages

Manufacturer	CREE [Cree, Inc]

Direct Link	http://www.cree.com/

Logo

Description	10 W, DC - 6 GHz, RF Power GaN HEMT

CG2H40010P Datasheet (HTML) - Cree, Inc

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CG2H40010P Product details

Cree’s CG2H40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high effciency, high gain and wide bandwidth capabilities making the CG2H40010 ideal for linear and compressed amplifer circuits. The transistor is available in both screw-down, ﬂange and solderdown, pill packages.

FEATURES
• Up to 8 GHz Operation
• 18 dB Small Signal Gain at 2.0 GHz
• 16 dB Small Signal Gain at 4.0 GHz
• 17 W typical PSAT
• 70 % Effciency at PSAT
• 28 V Operation

APPLICATIONS
• 2-Way Private Radio
• Broadband Amplifers
• Cellular Infrastructure
• Test Instrumentation
• Class A, AB, Linear amplifers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms

Similar Part No. - CG2H40010P

Manufacturer	Part #	Datasheet	Description
WOLFSPEED, INC.	CG2H40010	1Mb / 14P	10 W, DC - 8 GHz, RF Power GaN HEMT Rev. 2.0, 2022-7-7

Similar Description - CG2H40010P

Manufacturer	Part #	Datasheet	Description
Cree, Inc	CGH40010	948Kb / 12P	10 W, RF Power GaN HEMT Rev 1.4
	CGH40006P	1Mb / 14P	6 W, RF Power GaN HEMT Rev 3.0
	CGH40010	1Mb / 15P	10 W, RF Power GaN HEMT Rev 4.0
	CG2H40045	1Mb / 14P	45 W, DC - 4 GHz RF Power GaN HEMT
WOLFSPEED, INC.	CG2H40010	1Mb / 14P	10 W, DC - 8 GHz, RF Power GaN HEMT Rev. 2.0, 2022-7-7
	CG2H40035	2Mb / 21P	35 W, DC - 6 GHz, RF Power GaN HEMT Rev. 1.0, 2022-7-7
	CGH40006P	3Mb / 14P	6 W, RF Power GaN HEMT Rev. 3.3, 2022-11-1
	CGH40010	1Mb / 16P	10 W, DC - 6 GHz, RF Power GaN HEMT Rev. 4.4, 2022-10-28
	CGH40035	3Mb / 14P	35 W, DC - 4 GHz, RF Power GaN HEMT Rev. 4.2, 2022-11-17
	CGH40045	4Mb / 15P	45 W, DC - 4 GHz RF Power GaN HEMT Rev. 5.0, 2022-8-4

About Cree, Inc

Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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