WAS300M12BM2 Datasheet(PDF) - Cree, Inc

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WAS300M12BM2 Datasheet (PDF) - Cree, Inc

WAS300M12BM2 Datasheet PDF - Cree, Inc


Part #	WAS300M12BM2

Download	WAS300M12BM2 Download

File Size	1357.46 Kbytes

Page	9 Pages

Manufacturer	CREE [Cree, Inc]

Direct Link	http://www.cree.com/

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Description

1.2kV, 4.2 mohm All-Silicon Carbide THB-80 Half-Bridge Module

WAS300M12BM2 Datasheet (PDF)

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WAS300M12BM2 Datasheet PDF - Cree, Inc


Part #	WAS300M12BM2

Download	WAS300M12BM2 Click to download

File Size	1357.46 Kbytes

Page	9 Pages

Manufacturer	CREE [Cree, Inc]

Direct Link	http://www.cree.com/

Logo

Description	1.2kV, 4.2 mohm All-Silicon Carbide THB-80 Half-Bridge Module

WAS300M12BM2 Datasheet (HTML) - Cree, Inc

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Similar Part No. - WAS300M12BM2

Manufacturer	Part #	Datasheet	Description
Inchange Semiconductor ...	WAS300M12BM2	804Kb / 8P	All-SiC Power Module 2023-9-4

Similar Description - WAS300M12BM2

Manufacturer	Part #	Datasheet	Description
Cree, Inc	CAS100H12AM1	740Kb / 7P	1200V, 100A Silicon Carbide Half-Bridge Module
Molex Electronics Ltd.	CAS100H12AM1	859Kb / 11P	1200V, 100A Silicon Carbide Half-Bridge Module
Cree, Inc	CAS300M12BM2	849Kb / 8P	1.2kV, 5.0 m廓 All-Silicon Carbide Half-Bridge Module
	CAB450M12XM3	893Kb / 9P	1200V, 450A All-Silicon Carbide Conduction Optimized, Half-Bridge Module
	CAB016M12FM3	2Mb / 11P	1200 V, 16 m廓 All-Silicon Carbide Half-Bridge Module
General Electric Compan...	GE12047CCA3	491Kb / 9P	1200V half bridge Silicon Carbide Power module Rev. : 1, Public Release May 11, 2021
WOLFSPEED, INC.	CAB450M12XM3	892Kb / 9P	1200V, 450A All-Silicon Carbide Conduction Optimized, Half-Bridge Module Rev. A, 2019-06-01
	CAB530M12BM3	1Mb / 11P	1200 V, 530 A All-Silicon Carbide Half-Bridge Module Rev. 0, 2021-03-02
	WAB300M12BM3	1Mb / 12P	1200 V, 300 A All-Silicon Carbide THB-80 Qualified, Switching Optimized, Half-Bridge Module Rev. A 2020-05-20
	WAB400M12BM3	1Mb / 12P	1200 V, 400 A All-Silicon Carbide THB-80 Qualified, Conduction Optimized, Half-Bridge Module Rev. A 2020-05-22

About Cree, Inc

Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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