PTRA084808NF Datasheet(PDF) - Cree, Inc

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PTRA084808NF Datasheet (PDF) - Cree, Inc

PTRA084808NF Datasheet PDF - Cree, Inc


Part #	PTRA084808NF

Download	PTRA084808NF Download

File Size	649.86 Kbytes

Page	12 Pages

Manufacturer	CREE [Cree, Inc]

Direct Link	http://www.cree.com/

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Description

Thermally-Enhanced High Power RF LDMOS FET 550 W, 48 V, 734 ??821 MHz

PTRA084808NF Datasheet (PDF)

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PTRA084808NF Datasheet PDF - Cree, Inc


Part #	PTRA084808NF

Download	PTRA084808NF Click to download

File Size	649.86 Kbytes

Page	12 Pages

Manufacturer	CREE [Cree, Inc]

Direct Link	http://www.cree.com/

Logo

Description	Thermally-Enhanced High Power RF LDMOS FET 550 W, 48 V, 734 ??821 MHz

PTRA084808NF Datasheet (HTML) - Cree, Inc

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Similar Part No. - PTRA084808NF

Manufacturer	Part #	Datasheet	Description
WOLFSPEED, INC.	PTRA084808NF	881Kb / 12P	Thermally-Enhanced High Power RF LDMOS FET 550 W, 48 V, 734 – 821 MHz Rev. 03.4, 2022-1-27
WOLFSPEED, INC.	PTRA084808NF-V1-R5	881Kb / 12P	Thermally-Enhanced High Power RF LDMOS FET 550 W, 48 V, 734 – 821 MHz Rev. 03.4, 2022-1-27

Similar Description - PTRA084808NF

Manufacturer	Part #	Datasheet	Description
Infineon Technologies A...	PTFB082817FH	667Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791-821 MHz Rev. 02, 2010-12-13
	PTRA093818NF	470Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 415 W, 48 V, 925 ??960 MHz Rev. 05.1, 2017-08-16
	PTVA082407NF	453Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 48 V, 746 ??821 MHz Rev. 02.5, 2017-07-18
Cree, Inc	PTVA082407NF	639Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 48 V, 746 ??821 MHz
	PTVA120252MT	530Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 25 W, 48 V, 500 ??1400 MHz
	PTRA087008NB	660Kb / 11P	Thermally-Enhanced High Power RF LDMOS FET 650 W, 48 V, 755 ??805 MHz
	PTVA092407NF	595Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 48 V, 869 ??960 MHz
WOLFSPEED, INC.	PTRA084808NF	881Kb / 12P	Thermally-Enhanced High Power RF LDMOS FET 550 W, 48 V, 734 – 821 MHz Rev. 03.4, 2022-1-27
	PTVA082407NF	733Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 48 V, 746 – 821 MHz Rev. 04.1, 2022-02-13
	PTVA120252MT	553Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 25 W, 48 V, 500 – 1400 MHz Rev. 04.1, 2022-02-13

About Cree, Inc

Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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