Description
The TC51V8512AF is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC51V8512AF
utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power
storage. The TC51V8512AF operates from a single 3.0V power supply. Refreshing is supported by a refresh (OE/RFSH) input which
enables two types of refreshing - auto refresh and self refresh. The TC51V8512AF features a static RAM-like interface with a write
cycle in which the input data is written into the memory cell at the rising edge of R/W thus simplifying the microprocessor interface.
The TC51V8512AF is available in a 32-pin small outline plastic flat package, and a thin small outline package (forward type,
reverse type).

Features
• Organization: 524,288 words x 8 bits
• Low voltage function: 3.0V±10%
Data retention supply voltage: 2.0V - 3.3V
Fast access time
ICEA CE Access Time
TOEA OE Access Time
tac Cycle Time
Power Dissipation
Self Refresh Current 3.0V
TC51V8512AF Family
-15
150ns
80ns
230ns
66mW
-12
120ns
60ns
190ns
99mW
40μA
Auto refresh is supported by an internal refresh address
counter
Self refresh is supported by an internal timer
Inputs and outputs TTL compatible
Refresh: 2048 refresh cycles/32ms
Package
- TC51V8512AF: SOP32-P-525
- TC51V8512AFT: TSOP32-P-400
- TC518V512ATR: TSOP32-P-400A