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IMT65R072M1HXUMA1 Datasheet (PDF) - Infineon Technologies AG
IMT65R072M1HXUMA1 Datasheet PDF - Infineon Technologies AG
Part # IMT65R072M1HXUMA1
Download  IMT65R072M1HXUMA1 Download
File Size   1460.66 Kbytes
Page   15 Pages
Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG
Description MOSFET 650 V CoolSiCª M1 SiC Trench Power Device

IMT65R072M1HXUMA1 Datasheet (PDF)

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IMT65R072M1HXUMA1 Datasheet PDF - Infineon Technologies AG

Part # IMT65R072M1HXUMA1
Download  IMT65R072M1HXUMA1 Click to download

File Size   1460.66 Kbytes
Page   15 Pages
Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG
Description MOSFET 650 V CoolSiCª M1 SiC Trench Power Device

IMT65R072M1HXUMA1 Datasheet (HTML) - Infineon Technologies AG


IMT65R072M1HXUMA1 Product details

Features
• Optimized switching behavior at higher currents
• Commutation robust fast body diode with low Qf
• Superior gate oxide reliability
• Tj,max=175°C and excellent thermal behavior
• Lower RDS(on) and pulse current dependency on temperature
• Increased avalanche capability
• Compatible with standard drivers (recommended driving voltage: 0V-18V)
• Kelvin source provides up to 4 times lower switching losses




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About Infineon Technologies AG

Infineon Technologies is a leading global semiconductor manufacturer that specializes in providing power management, security, and control solutions for a variety of industries such as automotive, industrial, and communication systems.
The company was founded in 1999 and is headquartered in Neubiberg, Germany.
Infineon offers a wide range of products including microcontrollers, power semiconductors, sensors, and other integrated circuits.
The company has a strong presence in the global market, with operations and facilities in various countries across the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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