Description
The CMPA901A035F is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT) based monolithic microwave integrated circuit
(MMIC) on a silicon carbide (SiC) substrate. The semiconductor offers
35 Watts of power from 9 to 11 GHz of instantaneous bandwidth.
The GaN HEMT MMIC is housed in a thermally-enhanced, 10-lead 25
mm x 9.9 mm metal/ceramic flanged package. It offers high gain and
superior efficiency in a small footprint package at 50 ohms.
Features
• 35 W Typical PSAT
• >33% Typical Power Added Efficiency
• 22.5 dB Large Signal Gain
• High Temperature Operation
Note: Features are typical performance across
frequency under 25°C operation. Please reference
performance charts for additional details.
Applications
• Military Radar
• Marine Radar
• Weather Radar
• Medical Applications