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LH28F320BFHG-PBTLZN Datasheet (PDF) - Sharp Corporation

LH28F320BFHG-PBTLZN Datasheet PDF - Sharp Corporation
Part # LH28F320BFHG-PBTLZN
Download  LH28F320BFHG-PBTLZN Download
File Size   914.15 Kbytes
Page   37 Pages
Manufacturer  SHARP [Sharp Corporation]
Direct Link  http://sharp-world.com/
Logo SHARP - Sharp Corporation
Description 32M (x16) Flash Memory

LH28F320BFHG-PBTLZN Datasheet (PDF)

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LH28F320BFHG-PBTLZN Datasheet PDF - Sharp Corporation

Part # LH28F320BFHG-PBTLZN
Download  LH28F320BFHG-PBTLZN Click to download

File Size   914.15 Kbytes
Page   37 Pages
Manufacturer  SHARP [Sharp Corporation]
Direct Link  http://sharp-world.com/
Logo SHARP - Sharp Corporation
Description 32M (x16) Flash Memory

LH28F320BFHG-PBTLZN Datasheet (HTML) - Sharp Corporation


LH28F320BFHG-PBTLZN Product details

32Mbit (2Mbit×16) Page Mode Dual Work Flash MEMORY

The product, which is 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash memory, is a low power, high density, low cost, nonvolatile read/write storage solution for a wide range of applications. The product can operate at VCC=2.7V-3.6V and VPP=1.65V-3.6V or 11.7V-12.3V. Its low voltage operation capability greatly extends battery life for portable applications.

■ 32M density with 16Bit I/O Interface
■ High Performance Reads
   • 70/25ns 8-Word Page Mode
■ Configurative 4-Plane Dual Work
   • Flexible Partitioning
   • Read operations during Block Erase or (Page Buffer) Program
   • Status Register for Each Partition
■ Low Power Operation
   • 2.7V Read and Write Operations
   • VCCQ for Input/Output Power Supply Isolation
   • Automatic Power Savings Mode Reduces ICCR in Static Mode
■ Enhanced Code + Data Storage
   • 5µs Typical Erase/Program Suspends
■ OTP (One Time Program) Block
   • 4-Word Factory-Programmed Area
   • 4-Word User-Programmable Area
■ High Performance Program with Page Buffer
   • 16-Word Page Buffer
   • 5µs/Word (Typ.) at 12V VPP
■ Operating Temperature -40°C to +85°C
■ CMOS Process (P-type silicon substrate)
■ Flexible Blocking Architecture
   • Eight 4K-word Parameter Blocks
   • Sixty-three 32K-word Main Blocks
   • Bottom Parameter Location
■ Enhanced Data Protection Features
   • Individual Block Lock and Block Lock-Down with
      Zero-Latency
   • All blocks are locked at power-up or device reset.
   • Absolute Protection with VPP≤VPPLK
   • Block Erase, Full Chip Erase, (Page Buffer) Word
      Program Lockout during Power Transitions
■ Automated Erase/Program Algorithms
   • 3.0V Low-Power 11µs/Word (Typ.)
      Programming
   • 12V No Glue Logic 9µs/Word (Typ.)
      Production Programming and 0.5s Erase (Typ.)
■ Cross-Compatible Command Support
   • Basic Command Set
   • Common Flash Interface (CFI)
■ Extended Cycling Capability
   • Minimum 100,000 Block Erase Cycles
■ 0.75mm pitch 48-Ball CSP (7mm×7mm)
■ ETOXTM* Flash Technology
■ Not designed or rated as radiation hardened




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About Sharp Corporation


Sharp Corporation is a Japanese electronics company that was founded in 1912.
The company provides a wide range of products including consumer electronics, such as LCD TVs, home appliances, and solar panels, as well as industrial products such as LCD displays, solar cells, and electronic components.
Sharp has a long history of innovation and is known for its expertise in the development of cutting-edge technologies such as high-resolution displays, energy-efficient power solutions, and renewable energy.
The company has operations in several countries and is one of the leading electronics manufacturers in the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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