General Description
DOSEMI IGBT Power Discrete provides ultra
low conduction loss as well as low switching loss.
They are designed for the applications such as
inductive cooking.

Features
Low VCE(sat) Trench IGBT technology
Low switching loss
Maximum junction temperature 175oC
Low inductance case
VCE(sat) with positive temperature coefficient
Fast & soft reverse recovery anti-parallel FWD
Lead free package