Description
The FAD3224 4-A gate driver is designed to drive N-channel
enhancement-mode MOSFETs in low-side switching applications by
providing high peak current pulses during the short switching
intervals. Internal circuitry provides an und-voltage lockout function
by holding the output LOW until the supply voltage is within the
operating range. In addition, the drivers feature matched internal
propagation delays between A and B channels for applications
requiring dual gate drives with critical timing, such as synchronous
rectifiers. This also enables connecting two drivers in parallel to
effectively double the current capability driving a single MOSFET.
The FAD3224 has dual independent enable pins that default to ON if
not connected. If one or both inputs are left unconnected, internal
resistors bias the inputs such that the output is pulled LOW to hold the
power MOSFET OFF.

Features
• Industry-Standard Pinouts
• 4.5 V to 30 V Operating Range
• 5 A Peak Sink / Source at VDD = 12 V
• 4.3 A Sink / 2.8 A Source at VOUT = 6 V
• TTL Input Thresholds
• Internal Resistors Turn Driver Off If No Inputs
• 12 ns / 9 ns Typical Rise/Fall Times (2.2 nF Load)
• Under 20 ns Typical Propagation Delay Matched within 2 ns to the
Other Channel
• Double Current Capability by Paralleling Channels
• Rated from –40 °C to +125 °C Ambient
• Automotive Qualified to AEC-Q100
• FAD3224TMX with 4.5 V UVLO
• FAD3224TUMX with 9 V UVLO
• These are Pb-Free Devices

Applications
• Switch-Mode Power Supplies
• High-Efficiency MOSFET Switching
• Synchronous Rectifier Circuits
• DC-to-DC Converters
• Motor Control
• Automotive-Qualified Systems