1 Features
• Vendor item drawing number: VID V62/26604
• Radiation:
– Total ionizing dose (TID)
• Radiation hardness assurance (RHA) up to
30krad (Si) TID
• Enhanced low dose rate sensitivity (ELDRS)
free process
• High dose rate radiation lot acceptance
testing (HDR RLAT) up to 30krad (Si) TID
– Single event effects (SEE)
• Single event latch-up (SEL) immune
to linear energy transfer (LET) of
43MeV‑cm2/mg
• Single event transient (SET) characterized
to LET of 43MeV‑cm2/mg
• Space-enhanced plastic (Space EP, SEP)
– Lead-free construction
– Extended temperature range: –55°C to +125°C
• Differential to single-ended (D2S) RF amplifier
• Near-DC to 12GHz
• Gain: 15.2dB at 2GHz
• OP1dB: 11.4dBm (2GHz), 9.4dBm (6GHz)
• OIP3: 27dBm (2GHz), 28.5dBm (6GHz)
• NF: 10.9dB (2GHz), 12.1dB (6GHz)
• HD2 (1GHz): –57dBc at 2dBm
• HD3 (1GHz): –57dBc at 2dBm
• Additive (residual) phase noise (1GHz):
– –154.6dBc/Hz at 10kHz offset
• Gain and phase imbalance: ±0.6dB and ±3º
• Differential input matched to 100Ω, Single-ended
output matched to 50Ω
• Power-down feature
• 5V supply
• Active current: 170mA

2 Applications
• Directly interfaces with RF DACs
• Aerospace and defense
• Phased array radar
• Communications payload
• Radar imaging payload

3 Description
The TRF0108-SEP is a very high performance,
differential-to-single-ended (D2S) amplifier optimized
for radio-frequency (RF) applications. The device is
an excellent choice for applications that require a
D2S conversion when driven by a digital-to-analog
converter (DAC) such as the high-performance
DAC39RF10-SEP or AFE7950-SEP. The on-chip
matching components simplify printed circuit board
(PCB) implementation and provide the highest
performance over the usable bandwidth. The device
is fabricated using Texas Instruments’ advanced
complementary BiCMOS process and is available in
a space-saving, WQFN-FCRLF 2mm x 2mm package.
The TRF0108-SEP operates on a single 5V supply
and consumes about 170mA of active current. A
power-down feature is also available for power
savings.