1 Features
• Vendor item drawing number: VID V62/25656
• Radiation:
– Total ionizing dose (TID)
• Radiation hardness assurance (RHA) up to
30krad (Si) TID
• Enhanced low dose rate sensitivity (ELDRS)
free process
• High dose rate radiation lot acceptance
testing (HDR RLAT) up to 30krad (Si) TID
– Single event effects (SEE)
• Single event latch-up (SEL) immune
to linear energy transfer (LET) of
43MeV‑cm2/mg
• Single event transient (SET) characterized
to LET of 43MeV‑cm2/mg
• Space-enhanced plastic (Space EP, SEP)
– Lead-free construction
– Extended temperature range: –55°C to +125°C
• Single-ended input, differential output
• Excellent performance driving RF ADCs
• Fixed 14dB gain
• Bandwidth (3dB): >14GHz
• Gain flatness (1dB): 12GHz
• OIP3: 31dBm (4GHz), 31dBm (10GHz)
• OP1dB: 13.4dBm (4GHz), 15.4dBm (10GHz)
• NF: 8.9dB (4GHz), 10.6dB (10GHz)
• Gain and phase imbalance: ±0.3dB and ±3º
• Power-down feature
• 5V single-supply operation
• Active current: 174mA

2 Applications
• RF sampling or GSPS ADC driver
• Aerospace and defense
• Phased array radar
• Communications payload
• Radar imaging payload
• Radiation tolerant applications

3 Description
The TRF0213-SEP is a very high performance,
radio frequency (RF) amplifier optimized for RF
applications. This device is excellent for ac-coupled
applications that require a single-ended to differential
conversion when driving an RF sampling analog-todigital
converter (ADC) such as the high performance
AFE7950-SEP or ADC12DJ5200-SEP. The device
combines the functionality of a wide-band gain block
and a wide-band passive balun. The on-chip matching
components simplify printed circuit board (PCB)
implementation and provide the highest performance
over the usable bandwidth. The device is fabricated
in Texas Instruments’ advanced complementary
BiCMOS process and is available in a space-saving,
WQFN-FCRLF package.
The TRF0213-SEP operates on a single-rail supply
and consumes about 174mA of active current. A
power-down feature is also available for power
savings.