RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 28 volt base station equipment.

N-CDMA Application
• Typical Single-Carrier N-CDMA Performance @ 880 MHz, VDD = 28 Volts,
   IDQ = 950 mA, Pout = 27 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging, Traffic
   Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @
   0.01% Probability on CCDF.
      Power Gain — 20.2 dB
      Drain Efficiency — 31%
      ACPR @ 750 kHz Offset = -45.7 dBc in 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness

GSM EDGE Application
• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 mA,
   Pout = 60 Watts Avg., Full Frequency Band (865-960 MHz or 920-960 MHz)
      Power Gain — 20 dB
      Drain Efficiency — 40%
      Spectral Regrowth @ 400 kHz Offset = -63 dBc
      Spectral Regrowth @ 600 kHz Offset = -78 dBc
      EVM — 1.8% rms

GSM Application
• Typical GSM Performance: VDD = 28 Volts, IDQ = 700 mA, Pout =
   125 Watts, Full Frequency Band (920-960 MHz)
      Power Gain — 19 dB
      Drain Efficiency — 62%

Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.