DESCRIPTION
SHARP’s LH28F800SG Flash memory with SmartVoltage technology is a high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. LH28F800SG can operate at VCC = 2.7 V and VPP = 2.7 V. Its low voltage operation capability realize longer battery life and suits for cellular phone application.

FEATURES
• SmartVoltage technology
    – 3.0 V or 5 V VCC
    – 3.0 V, 5 V or 12 V VPP
• High-performance
    – 70 ns (5 V VCC) read access time
    – 100 ns (2.7 V VCC) read access time
• Enhanced automated suspend options
    – Word write suspend to read
    – Block erase suspend to word write
    – Block erase suspend to read
• Enhanced data protection features
    – Absolute protection with VPP = GND
    – Flexible block locking
    – Block erase/write lockout during power transitions
• Industry standard packaging
    – 48-pin TSOP
    – 44-Pin PSOP
• Chip size packaging
    – 48-ball CSP
• SRAM-compatible write interface
• High-density symmetrically blocked architecture
    – Sixteen 32K-word erasable blocks
• Extended cycling capability
    – 100,000 block erase cycles
    – 1.6 million block erase cycles/device
• Low power management
    – Deep power-down mode
    – Automatic power savings mode
    – Decreases ICC in static mode
• Automated word write and block erase
    – Command user interface
    – Status register
• ETOX™ V nonvolatile flash technology
• Not designed or rated as radiation hardened