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NP28N10SDE Datasheet (PDF) - Renesas Technology Corp

NP28N10SDE Datasheet PDF - Renesas Technology Corp
Part # NP28N10SDE
Download  NP28N10SDE Download
File Size   255.69 Kbytes
Page   8 Pages
Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp
Description MOS FIELD EFFECT TRANSISTOR

NP28N10SDE Datasheet (PDF)

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NP28N10SDE Datasheet PDF - Renesas Technology Corp

Part # NP28N10SDE
Download  NP28N10SDE Click to download

File Size   255.69 Kbytes
Page   8 Pages
Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp
Description MOS FIELD EFFECT TRANSISTOR

NP28N10SDE Datasheet (HTML) - Renesas Technology Corp


NP28N10SDE Product details

Description
The NP28N10SDE is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features
• Low on-state resistance
   RDS(on)1 = 52 mΩ MAX. (VGS = 10 V, ID = 14 A)
   RDS(on)2 = 59 mΩ MAX. (VGS = 4.5 V, ID = 14 A)
• Low Ciss: Ciss = 2200 pF TYP. (VDS = 25 V)
• Designed for automotive application and AEC-Q101 qualified




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About Renesas Technology Corp


Renesas Technology Corp is a Japanese semiconductor company that provides a wide range of microcontrollers, system-on-chips, and analog and power devices for various applications in the automotive, industrial, and consumer markets.
The company was formed in 2010 through the merger of NEC Electronics Corporation and Renesas Technology Corporation.
Renesas is one of the largest microcontroller suppliers in the world and is known for its expertise in the development of advanced technologies in areas such as the Internet of Things (IoT), artificial intelligence (AI), and automotive electronics.
The company has operations in over 20 countries and its products are used in a wide range of applications.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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