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IS25LD256C Datasheet (PDF) - Integrated Silicon Solution, Inc

IS25LD256C Datasheet PDF - Integrated Silicon Solution, Inc
Part # IS25LD256C
Download  IS25LD256C Download

File Size   321.45 Kbytes
Page   33 Pages
Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc
Description 256Kbit Single Operating Voltage Serial Flash Memory

IS25LD256C Datasheet (PDF)

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IS25LD256C Datasheet PDF - Integrated Silicon Solution, Inc

Part # IS25LD256C
Download  IS25LD256C Click to download

File Size   321.45 Kbytes
Page   33 Pages
Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc
Description 256Kbit Single Operating Voltage Serial Flash Memory

IS25LD256C Datasheet (HTML) - Integrated Silicon Solution, Inc

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IS25LD256C Product details

GENERAL DESCRIPTION
The IS25LD256C are 256Kbit Serial Peripheral Interface (SPI) Flash memories, providing single- or dual-output. The devices are designed to support a 33 MHz clock rate in normal read mode, and 100 MHz in fast read, the fastest in the industry. The devices use a single low voltage power supply, wide operating voltage ranging from 2.7 Volt to 3.6 Volt, to perform read, erase and program operations. The devices can be programmed in standard EPROM programmers.

FEATURES
• Single Power Supply Operation
    - Low voltage range: 2.7 V - 3.6 V
• Memory Organization
    - IS25LD256C: 32K x 8 (256Kbit)
• Cost Effective Sector/Block Architecture
    -256Kb : Uniform 4KByte sectors / one uniform 32KByte blocks
• Low standby current 1uA (Typ)
• Serial Peripheral Interface (SPI) Compatible
    - Supports single- or dual-output
    - Supports SPI Modes 0 and 3
    - Maximum 33 MHz clock rate for normal read
    - Maximum 100 MHz clock rate for fast read
• Page Program (up to 256 Bytes) Operation
    - Typical 2 ms per page program
• Sector, Block or Chip Erase Operation
    - Maximum 7 ms sector, block or chip erase
• Low Power Consumption
    - Typical 1 mA active read current
    - Typical 10 mA program/erase current
• Hardware Write Protection
    - Protect and unprotect the device from write operation by Write Protect (WP#) Pin
• Software Write Protection
    - The Block Protect (BP2, BP1, BP0) bits allow partial or entire memory to be configured as readonly
• High Product Endurance
    - Guaranteed 200,000 program/erase cycles per single sector
    - Minimum 20 years data retention
• Industrial Standard Pin-out and Package
    - 8-pin 150mil SOIC
    - 8-pin TSSOP
    - Lead-free (Pb-free) package




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About Integrated Silicon Solution, Inc


Integrated Silicon Solution, Inc. (ISSI) is a fabless semiconductor company that designs and markets high-performance integrated circuits (ICs) for the automotive, industrial, medical, and communications markets. The company was founded in 1988 and is headquartered in Milpitas, California, USA.

ISSI's product portfolio includes static random access memory (SRAM), dynamic random access memory (DRAM), and analog and mixed-signal ICs. The company specializes in low-power, high-speed SRAMs, and is a leading supplier of DRAMs to the automotive market.

In 2015, ISSI was acquired by China's Uphill Investment Co., Ltd. and became a wholly-owned subsidiary of Uphill Investment.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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