ADG779BKS Datasheet(PDF) - Analog Devices

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ADG779BKS Datasheet (PDF) - Analog Devices

ADG779BKS Datasheet PDF - Analog Devices


Part #	ADG779BKS

Download	ADG779BKS Download

File Size	385.72 Kbytes

Page	8 Pages

Manufacturer	AD [Analog Devices]

Direct Link	http://www.analog.com

Logo

Description

CMOS 1.8 V to 5.5 V, 2.5 ohm SPDT Switch/2:1 Mux In Tiny SC70 Package

ADG779BKS Datasheet (PDF)

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ADG779BKS Datasheet PDF - Analog Devices


Part #	ADG779BKS

Download	ADG779BKS Click to download

File Size	385.72 Kbytes

Page	8 Pages

Manufacturer	AD [Analog Devices]

Direct Link	http://www.analog.com

Logo

Description	CMOS 1.8 V to 5.5 V, 2.5 ohm SPDT Switch/2:1 Mux In Tiny SC70 Package

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ADG779BKS Product details

GENERAL DESCRIPTION

The ADG779 is a monolithic CMOS SPDT (single-pole, double-throw) switch. This switch is designed on a submicron process that provides low power dissipation yet gives high switching speed, low on resistance, and low leakage currents.

FEATURES

1.8 V to 5.5 V single supply

2.5 Ω on resistance

0.75 Ω on-resistance flatness

−3 dB bandwidth >200 MHz

Rail-to-rail operation

6-lead SC70 package

Fast switching times

tON 20 ns

tOFF 6 ns

Typical power consumption (<0.01 μW)

TTL/CMOS compatible

APPLICATIONS

Battery-powered systems

Communication systems

Sample hold systems

Audio signal routing

Video switching

Mechanical reed relay replacements

Similar Part No. - ADG779BKS

Manufacturer	Part #	Datasheet	Description
Analog Devices	ADG779BKS-R2	285Kb / 12P	CMOS 1.8 V to 5.5 V, 2.5 廓 SPDT Switch/2:1 Mux in Tiny SC70 Package REV. A
	ADG779BKS-REEL	285Kb / 12P	CMOS 1.8 V to 5.5 V, 2.5 廓 SPDT Switch/2:1 Mux in Tiny SC70 Package REV. A
	ADG779BKS-REEL7	285Kb / 12P	CMOS 1.8 V to 5.5 V, 2.5 廓 SPDT Switch/2:1 Mux in Tiny SC70 Package REV. A
	ADG779BKSZ-R22	285Kb / 12P	CMOS 1.8 V to 5.5 V, 2.5 廓 SPDT Switch/2:1 Mux in Tiny SC70 Package REV. A
	ADG779BKSZ-REEL2	285Kb / 12P	CMOS 1.8 V to 5.5 V, 2.5 廓 SPDT Switch/2:1 Mux in Tiny SC70 Package REV. A

Similar Description - ADG779BKS

Manufacturer	Part #	Datasheet	Description
Analog Devices	ADG819	195Kb / 12P	0.5 OHM CMOS 1.8 V to 5.5 V 2:1 Mux/SPDT Switches REV.0
	ADG859	278Kb / 16P	1.3ohm CMOS, 1.8 V to 5.5 V Single SPDT Switch/2:1 MUX in SOT-66 Package 6/05-Revision 0
	ADG719-EP	271Kb / 12P	CMOS 1.8 V to 5.5 V, 2.5 廓 2:1 Mux/SPDT Switch in SOT-23 REV. 0
	ADG779	285Kb / 12P	CMOS 1.8 V to 5.5 V, 2.5 廓 SPDT Switch/2:1 Mux in Tiny SC70 Package REV. A
	ADG719	232Kb / 16P	CMOS 1.8 V to 5.5 V, 2.5 廓 2:1 Mux/SPDT Switch in SOT-23 REV. D
	ADG819BRTZ-REEL7	283Kb / 12P	0.5 n CMOS 1.8 V to 5.5 V 2:1 Mux/SPDT Switches REV. 0
	ADG849YKSZ-500RL7	348Kb / 12P	3 V/5 V CMOS 0.5 ohm SPDT/2:1 Mux in SC70 REV. 0
	ADG749BKSZ-REEL7	299Kb / 12P	CMOS 1.8 V to 5.5 V, 2.5 ohm 2:1 Mux/SPDT Switch in SC70 Package REV. C
	ADG749	299Kb / 12P	2:1 Mux/SPDT Switch in SC70 Package REV. C
	ADG779	285Kb / 12P	SPDT Switch/2:1 Mux in Tiny SC70 Package REV. A

About Analog Devices

Analog Devices, Inc. (ADI) is a publicly traded company that designs, develops, and manufactures high-performance analog, mixed-signal, and digital signal processing (DSP) integrated circuits (ICs).
The company was founded in 1965 and is headquartered in Norwood, Massachusetts.
ADI serves a wide range of industries, including aerospace and defense, automotive, communications, consumer, industrial, medical, and test and measurement.
The company's product portfolio includes data converters, amplifiers and comparators, power management ICs, microcontrollers, sensors, and radio frequency (RF) and microwave components, among others.
ADI is dedicated to innovation and customer satisfaction, and is committed to providing its customers with high-quality, reliable solutions to meet their needs.
With a focus on energy efficiency and sustainability, ADI is a leader in the analog and mixed-signal IC industry, driving technological advancements and providing innovative solutions to the world's most challenging problems.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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