| Manufacturer | Part # | Datasheet | Description |
 Cree, Inc |
PXAC243502FV
|
543Kb / 10P |
High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz
|
 Infineon Technologies A... |
PXAC243502FVV1R0
|
1Mb / 10P |
High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz
Rev. 03.2, 2016-06-22 |
|
PXAC243502FVV1R0XTMA1
|
1Mb / 10P |
High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz
Rev. 03.2, 2016-06-22 |
|
PXAC243502FVV1R250
|
1Mb / 10P |
High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz
Rev. 03.2, 2016-06-22 |
|
PXAC243502FVV1R250XTMA1
|
1Mb / 10P |
High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz
Rev. 03.2, 2016-06-22 |