PXAC243502FV pdf, PXAC243502FV Description, PXAC243502FV Datasheet, PXAC243502FV view ::: ALLDATASHEET :::

Part #	PXAC243502FV

Description	High Power RF LDMOS Field Effect Transistor

File Size	1367.23 Kbytes

Html View	1 2 3 4 5 6 7 8 9 Next

Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

Logo

Similar Part No. - PXAC243502FV

Manufacturer	Part #	Datasheet	Description
Cree, Inc	PXAC243502FV	543Kb / 10P	High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz
Infineon Technologies A...	PXAC243502FVV1R0	1Mb / 10P	High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz Rev. 03.2, 2016-06-22
	PXAC243502FVV1R0XTMA1	1Mb / 10P	High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz Rev. 03.2, 2016-06-22
	PXAC243502FVV1R250	1Mb / 10P	High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz Rev. 03.2, 2016-06-22
	PXAC243502FVV1R250XTMA1	1Mb / 10P	High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 ??2400 MHz Rev. 03.2, 2016-06-22

Manufacturer	Part #	Datasheet	Description
Infineon Technologies A...	PTF080101	64Kb / 4P	LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ 2004-03-08
	PTFC270101M	409Kb / 21P	High Power RF LDMOS Field Effect Transistor Rev. 04, 2015-04-01
	PTFB183408SV	248Kb / 15P	High Power RF LDMOS Field Effect Transistor Rev. 03, 2014-03-07
	PTFB201402FC	841Kb / 14P	High Power RF LDMOS Field Effect Transistor Rev. 03.1, 2016-06-14
Renesas Technology Corp	NEM090303M-28	295Kb / 12P	LDMOS FIELD EFFECT TRANSISTOR 2003
	NEM090603M-28	302Kb / 11P	LDMOS FIELD EFFECT TRANSISTOR 2006
	NEM090853P-28	283Kb / 10P	LDMOS FIELD EFFECT TRANSISTOR 2004
	NEM091203P-28	310Kb / 13P	LDMOS FIELD EFFECT TRANSISTOR 2005
	NEM091603P-28	306Kb / 11P	LDMOS FIELD EFFECT TRANSISTOR 2008
	NEM091803S-28	271Kb / 9P	LDMOS FIELD EFFECT TRANSISTOR 2004